onsemi PowerTrench N-Channel MOSFET, 21 A, 60 V, Enhancement Mode, 3-Pin TO-220 FDPF320N06L

onsemi FDPF320N06L is a PowerTrench N-Channel MOSFET designed for high-performance power switching and amplification in various industrial and electronic applications. Operating with a maximum continuous drain current of 21 A and a drain-source voltage rating of 60 V, it supports robust and efficient power control.

This transistor features an enhancement mode channel type with a low on-resistance of 38 milliohms, delivering low conduction losses and improved energy efficiency. The forward voltage drop is typically 1.3 V, facilitating efficient current flow.

The device is packaged in a 3-pin TO-220 through-hole form factor, providing excellent thermal conductivity and compatibility with standard heatsinks. It supports a broad operating temperature range from -55°C to 175°C, making it suitable for demanding environments such as industrial automation, power management, and motor control circuits.

Additional features include a typical gate charge of 23.2 nC at gate-source voltage and a gate-source voltage tolerance from -20 V to +20 V, ensuring reliable switching performance. Its compact physical dimensions allow integration into space-constrained electronic assemblies.

Applications span industrial power supplies, converters, battery management systems, and HVAC controls. Engineers can leverage onsemi's high-quality MOSFET for durable, efficient, and responsive power solutions.

Designed for high efficiency switching applications. Features a low maximum drain-source resistance (38mΩ) to minimize conduction losses. Maximum power dissipation rating of 26 watts for reliable operation. Wide operating temperature range from -55°C to 175°C supports harsh environments.

Enhanced forward voltage of 1.3 V optimizes performance during conduction. Robust TO-220 through-hole package ensures ease of mounting and heat dissipation. Typical gate charge of 23.2 nC allows efficient switching at varying speeds.

Supports gate-source voltage from -20 V to +20 V, offering versatility in control signals. Compact dimensions: length 10.36 mm, width 4.9 mm, height 16.07 mm.

This product is a new condition semiconductor device made in India or original country of manufacture. It is an ideal choice for electronic designers and technicians requiring reliable, precision power MOSFET transistors. Explore more power semiconductor devices and components at EnvMart for your industrial and electronic applications.