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Infineon 800V CoolMOS P7 N-Channel MOSFET, 11 A, 800 V Enhancement Mode, 3-Pin TO-220 IPAN80R450P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPAN80R450P7XKSA1 |
| Mount Type | Through Hole |
| Series | 800V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 17.9W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Optimized for flyback applications including adapters, chargers, and LED drivers.
- Offers up to 0.6% efficiency gain and reduces MOSFET temperature by 2°C to 8°C compared to predecessor models.
- Enables higher power density designs due to lower switching losses and improved RDS(on).
- Integrated Zener diode for ESD protection up to Class 2 (HBM).
- Reliable and quality-tested with fully optimized product portfolio.
- Features a 3-pin TO-220 through-hole package for easy mounting.
- Supports a maximum continuous drain current of 11 A and a maximum power dissipation of 17.9 W.
- Operates safely between -55°C to 150°C ambient temperatures.
Product Description
Infineon IPAN80R450P7XKSA1 is an 800V CoolMOS P7 N-Channel MOSFET designed for efficient power switching in high-voltage applications. Rated for 11 A continuous drain current with a maximum drain-source voltage of 800 V, this device is optimized for flyback topologies including adapters, chargers, LED drivers, audio SMPS, auxiliary power supplies, and industrial power management systems.
The CoolMOS P7 series offers enhanced efficiency with up to 0.6% gain and reduced device temperature by 2°C to 8°C over its predecessors and competitor equivalents under typical operating conditions. This improvement results in higher power density system designs and superior thermal management. The integrated Zener diode provides robust ESD protection compliant with Class 2 Human Body Model standards.
Housed in a 3-pin TO-220 through-hole package, the MOSFET facilitates straightforward mounting and heatsink connection, supporting a maximum power dissipation of 17.9 W. It features a low on-state resistance (Rds(on)) of 450 mΩ, enabling low conduction losses and improved system efficiency.
The device operates reliably across temperatures from -55°C to 150°C and supports a maximum gate-source voltage of 20 V. The typical gate charge of 24 nC allows for fast switching suitable for high-frequency power conversion designs. A forward voltage of 900 mV ensures effective switching and voltage control in power applications.
Optimized for adapter, charger, LED driver, and industrial power applications. High efficiency and thermal performance with CoolMOS P7 technology. Integrated Zener diode for enhanced ESD protection. Robust 3-pin TO-220 through-hole mount package.
Maximum continuous drain current 11 A and 800 V drain-source voltage. Maximum power dissipation 17.9 W ensuring thermal stability. Wide operating temperature range from -55°C to 150°C. Low on-resistance and fast switching with typical gate charge 24 nC.
Suitable for industrial, power supply, audio, and LED driver uses. Explore the full Infineon range of MOSFETs and power semiconductors on EnvMart to meet your electronic component requirements for advanced power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
This MOSFET supports a maximum drain-source voltage of 800 V.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum power dissipation for this unit is 17.9 W.
It comes in a 3-pin TO-220 through-hole package, facilitating easy mounting.
The typical gate charge is 24 nC, which allows for fast switching.
The maximum drain-source resistance (Rds(on)) is 450 mΩ, contributing to low conduction losses.
It is optimized for flyback applications including adapters, chargers, LED drivers, and industrial power management systems.
Yes, it includes an integrated Zener diode for ESD protection compliant with Class 2 Human Body Model standards.
The maximum gate-source voltage is 20 V.
The country of origin for this product is India.
This model features an N-channel type, which is common for enhancement mode applications.
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