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Infineon CoolMOS P7 N-Channel MOSFET 6 A 800 V Enhancement 3-Pin IPAK IPU80R900P7AKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPU80R900P7AKMA1 |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Designed primarily for fly back applications such as adapters, chargers, LED drivers, and audio SMPS.
- Offers up to 0.6% efficiency gain and lowers MOSFET temperature by 2°C to 8°C compared to previous generation devices.
- Enables higher power density designs through minimal switching losses and improved RDS(on) characteristics.
- Integrates Zener diode ESD protection up to Class 2 (HBM) for enhanced reliability.
- Manufactured with best-in-class quality and reliability standards.
- Mount type is through hole for easy PCB integration.
- Maximum continuous drain current of 6 A supports moderate power applications.
- Maximum power dissipation of 45 W ensures efficient thermal management.
Product Description
Infineon IPU80R900P7AKMA1 CoolMOS P7 N-Channel MOSFET is a high-performance discrete semiconductor component ideal for industrial and electronic applications requiring efficient power switching.
This MOSFET features a 6 A maximum continuous drain current and an 800 V maximum drain source voltage, implemented in a compact 3-pin IPAK package suitable for through-hole mounting.
The device excels in fly back applications including adapters, chargers, LED drivers, audio SMPS, auxiliary power supplies, and various industrial power stages due to its enhanced efficiency and thermal characteristics.
Compared to predecessors and competitors, it provides up to 0.6% higher efficiency and reduces operating temperature by 2°C to 8°C, allowing for higher power density designs with reduced switching losses.
Integrated Zener diode ESD protection up to Class 2 (HBM) ensures device robustness against electrostatic discharges, enhancing system reliability. Focuses on fly back applications including adapters and chargers. Enhanced efficiency gain of up to 0.6% compared to predecessor MOSFETs.
Lower operational MOSFET temperature by 2°C to 8°C. Enables higher power density through reduced switching losses and improved RDS(on). Integrated Zener diode offers robust electrostatic discharge protection (Class 2 HBM).
Designed for industrial, commercial, and consumer electronic environments. Utilizes through-hole mounting for stable PCB assembly. Supports operation in temperature range from -55°C to 150°C. Maximum power dissipation rating of 45 W supports efficient thermal management.
Gate charge optimized for fast switching with 15 nC typical charge at Vgs. This CoolMOS P7 N-Channel MOSFET from Infineon is a trusted component for engineers designing power-efficient, reliable electronic circuits and power management systems.
Explore additional Infineon semiconductor components and power devices in EnvMart's comprehensive catalog designed for industrial, commercial, and laboratory applications.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon CoolMOS P7 N-Channel MOSFET is 6 A.
This model can handle a maximum drain source voltage of 800 V.
The maximum power dissipation rating for this MOSFET is 45 W, which supports efficient thermal management.
The typical gate charge at Vgs for this model is 15 nC.
This device operates within a temperature range of -55°C to 150°C.
It utilizes through-hole mounting for easy PCB integration.
This MOSFET is designed primarily for fly back applications, including adapters, chargers, LED drivers, and audio SMPS.
It offers up to 0.6% efficiency gain and lowers the MOSFET temperature by 2°C to 8°C compared to previous generation devices.
The package type for this model is IPAK, which is suitable for through-hole mounting.
The maximum gate source voltage for this model is 20 V.
The channel type of this MOSFET is N-channel, with enhancement mode characteristics.
It integrates Zener diode ESD protection up to Class 2 (HBM) for enhanced reliability.
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