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Infineon CoolMOS CE N-Channel MOSFET, 5.4 A, 500 V Enhancement, 3-Pin TO-220 IPA50R500CEXKSA2
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA50R500CEXKSA2 |
| Mount Type | Through Hole |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.4A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 28W |
| Typical Gate Charge Qg @ Vgs | 18.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 850mV |
Key Features
- The CoolMOS CE series provides fast switching with very low losses due to low Rdson and gate charge.
- It features very high commutation ruggedness and easy driving capabilities.
- Constructed with Pb-free plating and halogen-free mold compound ensuring environmental compliance.
- Rated for a maximum power dissipation of 28 W and maximum operating temperature of 150°C.
- Designed for use in PFC stages, hard switching PWM stages, and resonant switching stages.
- Typical gate charge is 18.7 nC at Vgs with a forward voltage of 850 mV.
- It supports through-hole mounting complying with standard grade application requirements.
- Operates reliably in temperatures from -55°C up to 150°C.
Product Description
Infineon IPA50R500CEXKSA2 is a CoolMOS CE N-Channel MOSFET designed for high efficiency switching applications. This device supports a maximum continuous drain current of 5.4 A and withstands a drain-source voltage of up to 500 V. Packaged in a 3-pin TO-220 format for through-hole mounting, it provides ease of use for assembly and integration.
The CoolMOS CE series stands out for its extremely low losses enabled by very low figure of merit (Rdson*Qg) and low switching losses (Eoss), ensuring superior performance in power factor correction (PFC) stages, hard switching pulse-width modulation (PWM) stages, and resonant switching environments. Typical applications include PC power supplies, adapters, LCD and plasma display panel TVs, and indoor lighting systems.
Featuring Pb-free plating and a halogen-free mold compound, this MOSFET complies with environmental standards, contributing to sustainable manufacturing processes.
The device showcases a maximum power dissipation rating of 28 W and a maximum operating temperature of 150°C, with a minimum operating temperature of -55°C, enabling reliable operation in demanding environments.
Its forward voltage of 850 mV and a typical gate charge of 18.7 nC at gate-source voltage ensure efficient switching with minimal energy loss.
With a maximum gate-source voltage of 20 V and a channel mode enhancement type, it offers robust switching characteristics. The device is not specifically qualified to automotive standards but is designed for general standard-grade semiconductor applications.
The CoolMOS CE series offers very low on-resistance and gate charge for high efficiency. High commutation ruggedness supports demanding switching conditions. Environmentally compliant with Pb-free plating and halogen-free molding.
Wide operating temperature range from -55°C to 150°C. Suitable for industrial electronics including lighting and power supplies. Through-hole TO-220 package facilitates easy PCB mounting. Optimized for PFC and PWM power stage designs.
Standard grade qualification for diverse semiconductor applications.
This Infineon MOSFET is ideal for industrial and commercial electronics requiring efficient power switching. Explore related products and brands in the Electronics & Electricals > Discrete Semiconductors > MOSFET category at EnvMart for comprehensive technical and sourcing support.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.4 A.
It can withstand a maximum drain-source voltage of 500 V.
This model is packaged in a TO-220 format for through-hole mounting.
The maximum power dissipation rating is 28 W.
The typical gate charge at Vgs is 18.7 nC.
It operates reliably in a temperature range from -55°C to 150°C.
This device features an N-channel type.
The forward voltage for this MOSFET is 850 mV.
The maximum gate-source voltage is 20 V.
It features Pb-free plating and a halogen-free mold compound, ensuring environmental compliance.
It is designed for use in power factor correction (PFC) stages, hard switching PWM stages, and resonant switching stages.
This model has a pin count of 3.
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