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STMicroelectronics N-Channel STripFET H7 MOSFET 25 A 100 V Enhancement 3-Pin TO-252 STD25N10F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD25N10F7 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET belongs to the STripFET H7 series with ultra-low gate charge and low on-resistance.
- The device operates in enhancement mode for efficient switching.
- Maximum drain-source resistance is 35 milliohms, ensuring low conduction losses.
- Maximum power dissipation is 40 watts for reliable thermal performance.
- Operating temperature range is from -55°C up to 175°C, suitable for industrial applications.
- The package type is TO-252 with a surface mount configuration and 3 pins.
- Typical gate charge is 14 nanocoulombs at gate voltage, optimizing switching speed.
- Maximum gate-source voltage is ±20 V, designed for stable operation.
Product Description
STMicroelectronics STD25N10F7 is an N-Channel enhancement mode MOSFET from the STripFET H7 series, designed for high efficiency and low conduction losses in electronic circuits. The device supports a continuous drain current of 25 A and withstands a maximum drain-source voltage of 100 V.
This MOSFET comes in a compact 3-pin TO-252 surface-mount package with dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height, providing excellent thermal dissipation capabilities with a maximum power dissipation rating of 40 W. Its ultra-low gate charge of 14 nC at gate voltage enables fast switching with minimal power loss.
Its operating temperature range from -55°C to 175°C makes it suitable for demanding industrial, automotive, and commercial electronic applications requiring reliable power switching components. The device features a maximum drain-source resistance of 35 milliohms, reducing conduction losses and improving overall circuit efficiency.
The gate-source voltage tolerance of ±20 V and the forward voltage drop of 1.1 V make it stable and efficient in switching operations. STMicroelectronics' STripFET H7 MOSFETs combine high performance and durability for use in advanced electronic systems.
Part of the high-performance STripFET H7 series by STMicroelectronics. Compact 3-pin TO-252 surface mount package. Ultra-low gate charge and low on-resistance for efficient switching. Broad operating temperature range from -55°C to 175°C.
Suitable for industrial, automotive, and commercial power electronics. Explore the Electronics & Electricals category on EnvMart for a wide range of semiconductors and MOSFET devices to meet your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 25 A.
It can withstand a maximum drain-source voltage of 100 V.
This MOSFET comes in a TO-252 package type with a surface mount configuration.
The operating temperature range is from -55°C to 175°C.
The maximum power dissipation rating is 40 W.
The typical gate charge is 14 nanocoulombs at gate voltage.
The maximum drain-source resistance is 35 milliohms.
This model has 3 pins.
The forward voltage drop is 1.1 V.
The maximum gate-source voltage tolerance is ±20 V.
It belongs to the STripFET H7 series by STMicroelectronics.
This device features an N-channel type.
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