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STMicroelectronics STripFET H7 N-Channel MOSFET 110A 100V TO-220 STF45N10F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.6mm |
| Model | STF45N10F7 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET features ultra-low 7mΩ on-resistance for efficient power management.
- It operates with an enhancement channel mode suitable for various electronic applications.
- MAX gate charge is only 72nC at Vgs, enabling fast switching performance.
- Supports a broad temperature range from -55°C to 175°C ensuring reliability.
- Three pins and through-hole mounting provide easy integration into electronic circuits.
- Maximum power dissipation rating is 30W for robust energy handling.
- Forward voltage at 1.1V supports low power loss during conduction.
- Compact dimensions of 16.4mm height, 10.6mm length, and 4.6mm width optimize PCB space.
Product Description
STMicroelectronics STF45N10F7 N-Channel MOSFET is a high-performance transistor designed for power electronics applications requiring efficient switching and high current handling. Featuring the STripFET™ H7 series technology, this device offers ultra-low gate charge and on-resistance, enhancing power efficiency in circuits.
It supports a maximum continuous drain current of 110A and can withstand a drain-source voltage up to 100V. The enhancement channel mode delivers reliable switching behavior, while the maximum power dissipation of 30W allows operation under demanding electrical loads.
The MOSFET is housed in a robust 3-pin TO-220 package with a through-hole mount, facilitating effective heat dissipation and mechanical stability. Its wide operating temperature range from -55°C up to 175°C suits industrial, automotive, and power management applications.
Additional characteristics include a low gate charge of 72nC at specified gate voltage, a forward voltage of 1.1V, and compact physical dimensions of 16.4mm height, 10.6mm length, and 4.6mm width, making it suitable for space-constrained electronic designs.
Applications for this device include industrial power control, automotive electronics, power supplies, and other electronics systems requiring efficient high-current switching components.
Ultra-low on-resistance of 7mΩ improves energy efficiency. Capable of handling 110A continuous current for demanding loads. 100V maximum drain-source voltage for broad application range. Wide temperature operation ensures durability in harsh environments.
TO-220 package supports thermal management and ease of mounting. Low gate charge enhances switching speed performance. Compact dimensions reduce PCB footprint and facilitate design flexibility. Choose STMicroelectronics MOSFETs for reliable, high-efficiency power electronics components on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 110A, making it suitable for demanding electrical loads.
It can withstand a maximum drain-source voltage of 100V, allowing for a broad range of applications.
This MOSFET features an ultra-low on-resistance of 7mΩ, which enhances energy efficiency during operation.
The typical gate charge at the specified gate voltage is 72nC, enabling fast switching performance.
It operates within a wide temperature range from -55°C to 175°C, ensuring reliability in various environments.
This model uses a through-hole mounting type, which facilitates easy integration into electronic circuits.
The dimensions are 16.4mm in height, 10.6mm in length, and 4.6mm in width, optimizing PCB space.
It has a maximum power dissipation rating of 30W, which allows for robust energy handling.
The forward voltage is 1.1V, which supports low power loss during conduction.
This MOSFET has a pin count of 3, suitable for various circuit designs.
It belongs to the STripFET H7 series, known for its efficient power management capabilities.
This model uses an enhancement channel mode, which provides reliable switching behavior.
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