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Infineon OptiMOS N-Channel MOSFET, 147 A, 25 V Enhancement, 8-Pin TDSON Package BSC015NE2LS5IATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC015NE2LS5IATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 147A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 1.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 650mV |
Key Features
- Features a maximum continuous drain current of 147 amperes for heavy load support.
- Operates with a 25 volts maximum drain-source voltage suitable for low-voltage power rails.
- Equipped with a low 1.5 milliohm drain-source resistance to reduce conduction losses.
- Typical gate charge of 22 nanocoulombs enables rapid and efficient switching control.
- Offers 50 watts maximum power dissipation for sustained operation.
- Forward voltage is 0.65 volts minimizing voltage drop under load conditions.
- Operating temperature range spans from -55°C to 150°C for wide thermal tolerance.
- Packaged in an 8-pin TDSON surface-mount package measuring 5.49mm by 6.35mm with 1.1mm height.
Product Description
Infineon BSC015NE2LS5IATMA1 is an OptiMOS series N-Channel MOSFET designed for demanding power switching and load control applications. It supports a high continuous drain current of 147A and withstands a maximum drain-source voltage of 25V, making it suitable for low-voltage, high-current circuits requiring efficient conduction and rapid switching capability.
This enhancement-mode MOSFET features a low on-resistance of 1.5mΩ, reducing power losses during conduction. With a typical gate charge of 22nC, it delivers fast switching performance, critical for power supplies and motor drives. The forward voltage of only 0.65V minimizes voltage drop, further enhancing efficiency.
The device is housed in a compact 8-pin TDSON surface-mount package, with dimensions of 5.49mm length, 6.35mm width, and 1.1mm height, facilitating compact PCB layouts. It is rated for a maximum power dissipation of 50W, supporting sustained power handling in thermally challenging environments.
Operating temperature ranges from -55°C to 150°C, allowing use in automotive and industrial temperature extremes. This MOSFET is suitable for applications such as high-current DC-DC converters, synchronous rectification, power supply regulators, motor drive stages, and battery protection circuits. Its surface-mount package simplifies assembly in compact electronic systems.
Maximum continuous drain current: 147A supports heavy loads. Maximum drain-source voltage: 25V suitable for low-voltage power rails. Low drain-source resistance: 1.5mΩ reduces conduction losses. Typical gate charge: 22nC allows efficient switching.
Maximum power dissipation: 50W enables sustained use. Forward voltage: 0.65V minimizes voltage drop. Wide operating temperature: -55°C to 150°C enables harsh environment use. Compact 8-pin TDSON package size 5.49mm x 6.35mm x 1.1mm facilitates PCB layout.
Infineon MOSFETs like this model are ideal for industrial, automotive, power management, and consumer electronics applications requiring reliable high-current switching with low losses. Discover more quality semiconductor components at EnvMart for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 147 amperes, which supports heavy load applications.
This MOSFET has a maximum drain-source voltage rating of 25 volts, suitable for low-voltage power rails.
The typical gate charge for this unit is 22 nanocoulombs, enabling efficient switching control.
It features a low drain-source resistance of 1.5 milliohms, which helps reduce conduction losses.
This model can handle a maximum power dissipation of 50 watts, allowing for sustained operation in demanding conditions.
The dimensions of the 8-pin TDSON package are 5.49mm in length, 6.35mm in width, and 1.1mm in height.
It utilizes a surface mount type, which simplifies assembly in compact electronic systems.
The forward voltage drop is 0.65 volts, which minimizes voltage drop under load conditions.
The maximum gate-source voltage for this MOSFET is 16 volts.
This model belongs to the OptiMOS series, designed for efficient power switching applications.
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