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onsemi Silicon Junction Switching Diode 2 A Maximum Forward Current 150 V DO-214AC Package MURA115T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.05mm |
| Length | 4.57mm |
| Model | MURA115T3G |
| Width | 2.92mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214AC |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 40A |
| Maximum Forward Voltage Vf | 875mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 150V |
Key Features
- Single silicon junction diode configuration for reliable switching performance.
- Maximum forward current rating of 2 amperes ensures suitability for medium power circuits.
- DO-214AC surface mount package with 2 pins designed for compact PCB layouts.
- Maximum peak reverse repetitive voltage of 150 volts for durable reverse blocking capability.
- Peak non-repetitive forward surge current of 40 amperes provides high surge tolerance.
- Forward voltage drop approximately 875 mV optimizes power efficiency.
- High temperature operation from -65°C up to 175°C ensures suitability for demanding environments.
- No automotive qualification or specific standards approvals applied to this diode model.
Product Description
onsemi MURA115T3G is a high-performance Silicon Junction Switching Diode designed for use in medium power electronic circuits. It features a maximum forward current rating of 2 A and a peak reverse repetitive voltage of 150 V, suitable for efficient switching in power and signal applications. This diode is housed in the compact DO-214AC surface mount package with a 2-pin configuration ideal for low-profile mounting on printed circuit boards.
The diode offers a low forward voltage drop of about 875 millivolts, improving power efficiency and reducing heat dissipation. It supports a peak non-repetitive forward surge current of up to 40 A, enabling it to withstand transient overloads typical in power management and rectification circuits.
Operating temperature ranges from a minimum of -65 °C to a maximum of 175 °C make it capable of performing reliably in harsh and industrial environments including automotive electronics, industrial equipment, and consumer electronics. Despite the robust electrical characteristics, this model is not qualified to AEC-Q101 automotive standards.
With physical dimensions of 4.57 mm length, 2.92 mm width, and 2.05 mm height, the MURA115T3G diode supports dense PCB layout design with minimal space requirements. Its surface mount configuration promotes automated assembly and improved manufacturing efficiencies.
Single silicon junction diode for switching applications. Maximum forward current rating of 2 amperes. Reverse voltage capability up to 150 volts. Surface mount DO-214AC package with 2 pins. Forward voltage drop approximately 875 millivolts.
Peak non-repetitive surge current of 40 amperes tolerance. Operating temperature range from -65°C to 175°C. Compact diode dimensions suitable for tight PCB layouts. Not compliant with automotive AEC-Q101 standards.
This switching diode finds applications broadly across industrial, power electronics, consumer, and laboratory environments where reliable switching and rectification are necessary. Its surface mount package is well suited for high volume automated assembly processes. Choose onsemi's MURA115T3G for efficient and reliable diode switching performance.
Explore more Switching Diodes and discrete semiconductors at EnvMart for your industrial, electronic design, and manufacturing needs.
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Frequently Asked Questions
The maximum forward current rating of the MURA115T3G diode is 2 amperes.
This diode has a peak reverse repetitive voltage of 150 volts.
It is housed in a DO-214AC surface mount package with a 2-pin configuration.
The forward voltage drop is approximately 875 millivolts.
The diode supports a peak non-repetitive forward surge current of up to 40 amperes.
It operates within a temperature range of -65°C to 175°C.
The dimensions are 4.57 mm in length, 2.92 mm in width, and 2.05 mm in height.
It features a single silicon junction diode configuration.
No, this model is not qualified to AEC-Q101 automotive standards.
It is suitable for medium power electronic circuits, including industrial, power electronics, consumer, and laboratory environments.
The peak reverse recovery time is 35 nanoseconds.
The mount type is surface mount, which is ideal for compact PCB layouts.
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