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STMicroelectronics Darlington Transistor NPN 8A 100V 60W TO-220 BDX53C
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | BDX53C |
| Mount Type | Through Hole |
| Series | BDX53C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 60W |
| STMicroelectronics 1 Darlington Transistor NPN, 8 A 100 V HFE | 750, 3-Pin TO-220 |
| Bourns Electronics BDX53C NPN Darlington Transistor, 8 A 100 V HFE | 750, 3-Pin TO-220Brand: Bourns |
Key Features
- Delivers a continuous collector current of 8 A for high power applications.
- Maximum collector emitter voltage of 100 V ensures robust performance.
- Minimum DC current gain (hFE) of 750 for efficient amplification.
- Power dissipation rating of 60 W supports demanding thermal conditions.
- Designed for through-hole mounting with a 3-pin TO-220 package.
- Wide operating temperature range from -65°C to +150°C.
- Transistor polarity is NPN with a Darlington configuration.
- Maximum emitter base voltage of 5 V and collector saturation voltage of 2 V.
Product Description
STMicroelectronics BDX53C is a high-performance NPN Darlington transistor engineered to handle continuous collector currents up to 8 amperes with a maximum collector emitter voltage rating of 100 volts.
Manufactured in a TO-220 package, it supports through-hole mounting and offers robust power dissipation of up to 60 watts, making it suitable for industrial and power electronic applications.
The device features a minimum DC current gain (hFE) of 750, providing effective amplification capabilities in switching and amplification circuits. With operation temperatures extending from -65°C to +150°C, the BDX53C transistor delivers reliable performance in harsh environments.
The transistor has a maximum emitter base voltage of 5 volts and a maximum collector emitter saturation voltage of 2 volts, ensuring efficient switching behavior. Its physical dimensions, with a height of 9.15 mm and length of 10.4 mm, correspond to standard through-hole components aiding compatibility with common layouts.
Delivers up to 8 A continuous collector current. Maximum collector emitter voltage of 100 V. Minimum DC current gain of 750 for amplification. Power dissipation rating of 60 W. 3-pin TO-220 through hole package. Wide operating temperature from -65°C to 150°C.
NPN Darlington Transistor polarity. Maximum emitter base voltage: 5 V. Collector emitter saturation voltage max: 2 V. Physical dimensions 9.15 mm height and 10.4 mm length.
This transistor is widely used in industrial power management, motor control, and other high current amplification applications, making it suitable for laboratories, manufacturing equipment, and electronic system design.
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Frequently Asked Questions
The BDX53C can handle a maximum continuous collector current of 8 A.
This model has a maximum collector emitter voltage rating of 100 V.
The power dissipation rating is 60 W, supporting demanding thermal conditions.
It features a minimum DC current gain (hFE) of 750, which is effective for amplification.
The BDX53C operates within a temperature range of -65°C to 150°C.
This transistor is designed for through-hole mounting with a 3-pin TO-220 package.
The dimensions are 9.15 mm in height and 10.4 mm in length.
The maximum emitter base voltage is 5 V.
The maximum collector emitter saturation voltage is 2 V.
It is widely used in industrial power management, motor control, and high current amplification applications.
The transistor polarity is NPN with a Darlington configuration.
The maximum collector cut-off current is 0.2 mA.
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