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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW60R125CFD7XKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS CFD7 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 92W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Infineon IPW60R125CFD7XKSA1 CoolMOS CFD7 N-Channel MOSFET is a high-voltage power transistor designed employing a revolutionary super junction technology. It delivers enhanced performance with a maximum continuous drain current of 18 A and a maximum drain-source voltage of 600 V, making it highly suitable for demanding power electronic applications.
This MOSFET utilizes enhancement mode operation and features a low typical gate charge of 36 nC at Vgs, allowing ultrafast switching and high efficiency in power conversion circuits. Packaged in a rugged 3-pin TO-247 through-hole format, it ensures reliable mounting and excellent thermal management.
The technology supports resonant switching topologies including phase-shift full-bridge (ZVS) and LLC circuits, improving efficiency, power density, and operational reliability. The maximum power dissipation rated at 92 W facilitates effective heat dissipation during operation, further enhancing durability.
Additional features include an ultra-fast body diode and a typical forward voltage of 1 V to reduce conduction losses. The MOSFET also supports a maximum gate-source voltage of 20 V, ensuring strong gate control and safe operation under varying load conditions.
Dimensions of 16.13 mm length, 5.21 mm width, and 21.1 mm height allow its integration into compact designs while maintaining superior performance. Supports 18 A continuous drain current for high power applications. 600 V maximum drain-source voltage for robust voltage handling.
Efficient enhancement mode with low gate charge for fast switching. Reliable through-hole mounting in TO-247 package. High power dissipation capability of 92 W for heat management. Ultra-fast body diode for improved switching efficiency.
Low forward voltage of 1 V reduces conduction losses. Compact and robust physical dimensions. Maximum gate-source voltage rating of 20 V ensures control. Ideal for resonant and soft switching power electronics topologies.
This Infineon CoolMOS CFD7 MOSFET is widely used in industrial, power supply, automotive, and energy-efficient design applications requiring reliable high voltage and current switching capabilities. Browse EnvMart's extensive collection of power semiconductors for additional solutions and related components.
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