Infineon CoolMOS P7 N-Channel MOSFET 6 A 800 V Enhancement 3-Pin TO-251 IPS80R900P7AKMA1

Infineon IPS80R900P7AKMA1 is a CoolMOS P7 series N-Channel enhancement mode MOSFET designed for high efficiency power conversion in industrial, electronic, and power management applications. It is rated for a maximum continuous drain current of 6 A and a drain-source voltage of 800 V, packaged in a compact 3-pin TO-251 through-hole case.

The device combines Infineon's advanced super junction CoolMOS technology delivering low on-resistance (900 mΩ), which reduces conduction losses and enhances thermal performance. This MOSFET supports operating temperatures ranging from -55°C to 150°C, enabling use in demanding industrial and automotive environments.

With a maximum power dissipation of 45 W and typical gate charge of only 15 nC, it facilitates energy-efficient, fast switching circuits. The integrated channel mode is enhancement type, which is standard for MOSFET power switches. The maximum gate-source voltage of 20 V safeguards gate integrity during operation.

The IPS80R900P7AKMA1 is suitable for applications including industrial power supplies, motor controls, server power management, and embedded systems needing reliable high-voltage switching capabilities. The through-hole TO-251 package offers ease of mounting and mechanical robustness.

Key technical dimensions are 6.7 mm length, 2.35 mm width, and 6.22 mm height, supporting compact PCB layouts. Although no automotive standards or certifications are noted, the device meets broad industrial usage needs.

The device features enhancement mode channel type ensuring efficient switching. Maximum continuous drain current is 6 amperes supporting high load applications. Maximum drain-source voltage rating is 800 volts for high voltage operation.

Package type is TO-251 suitable for through-hole mounting. Has a low drain-source resistance of 900 milliohms reducing power loss. Maximum power dissipation is rated at 45 watts for reliable performance. Operating temperature range from -55°C to 150°C ensures durability in harsh environments.

Typical gate charge of 15 nanocoulombs at Vgs enhances switching speed efficiency. Maximum gate-source voltage is 20 volts to protect the gate from overvoltage. Compact dimensions with length 6.7 mm, width 2.35 mm, and height 6.22 mm.

This Infineon CoolMOS P7 MOSFET is an ideal choice for engineers seeking high-performance, energy-efficient, high-voltage power MOSFETs for a wide range of industrial and electronic circuit designs. Explore more Infineon semiconductor components and MOSFET products on EnvMart for trusted quality and comprehensive product selection.