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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP60R180C7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | CoolMOS C7 |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
The Infineon IPP60R180C7XKSA1 CoolMOS C7 N-Channel MOSFET is an advanced power semiconductor device engineered with super junction technology to enhance efficiency in high voltage applications. This MOSFET supports a continuous drain current of 13 A and a maximum drain-source voltage of 600 V, making it well-suited for a wide range of industrial applications including power management in servers, telecommunications infrastructure, and solar inverters.
Its 3-pin TO-220 package supports through-hole mounting and ensures robust mechanical and thermal connection. The device's enhancement mode operation and low drain-source resistance (180 mΩ) reduce conduction losses and improve switching performance. A typical gate charge of 24 nC at 24 V gate-source voltage enables efficient switching, while maximum power dissipation of 68 W offers reliable thermal handling under demanding conditions.
Engineered for industrial-grade quality, this MOSFET operates reliably over a broad temperature range down to -55°C. The device withstands a maximum gate-source voltage of ±20 V to protect against voltage spikes, and its intrinsic forward voltage drop of 900 mV is optimized for power conversion efficiency.
Applications include industrial power supplies, server power modules, telecom rectifiers, and solar inverter systems, where high efficiency, low loss, and robust operation are critical. The CoolMOS C7 series is recognized for enabling energy-efficient solutions supporting both hard and soft switching techniques in modern electronic power systems.
Designed with super junction (SJ) technology for high voltage MOSFET performance. Suitable for hard and soft switching applications in industrial environments. 13 A continuous drain current and 600 V drain-source voltage ratings.
Maximum power dissipation of 68 W to maintain thermal stability. Typical gate charge of 24 nC for fast and efficient switching. Compact 3-pin TO-220 package for convenient through-hole mounting. Wide operating temperature range down to -55°C for industrial grade use.
Maximum gate-source voltage rating of ±20 V for enhanced device protection. Infineon CoolMOS C7 series ideal for server, telecom, and solar power applications. Explore our Electronics & Electricals categories for more high-performance MOSFETs designed for your industrial and commercial needs at EnvMart.
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