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Infineon CoolMOS C7 N-Channel MOSFET 13 A 600 V Enhancement 3-Pin TO-220 IPP60R180C7XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.45mm
Length 10.36mm
Model IPP60R180C7XKSA1
Width 4.57mm
Mount Type Through Hole
Series CoolMOS C7
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 13A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 180mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 68W
Typical Gate Charge Qg @ Vgs 24nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Designed with super junction technology for high voltage power MOSFET efficiency.
  • Supports both hard and soft switching applications with low conduction losses.
  • Features a 180 mΩ maximum drain-source resistance for optimized power dissipation.
  • Operates reliably from -55°C to high temperatures for industrial grade use.
  • Typical gate charge of 24 nC enables fast switching performance.
  • Maximum power dissipation rating of 68 W ensures thermal robustness.
  • Built for through-hole mounting with a compact package size of 10.36 mm length and 9.45 mm height.
  • Maximum gate-source voltage of ±20 V protects against surges and voltage spikes.

Product Description

The Infineon IPP60R180C7XKSA1 CoolMOS C7 N-Channel MOSFET is an advanced power semiconductor device engineered with super junction technology to enhance efficiency in high voltage applications. This MOSFET supports a continuous drain current of 13 A and a maximum drain-source voltage of 600 V, making it well-suited for a wide range of industrial applications including power management in servers, telecommunications infrastructure, and solar inverters.

Its 3-pin TO-220 package supports through-hole mounting and ensures robust mechanical and thermal connection. The device's enhancement mode operation and low drain-source resistance (180 mΩ) reduce conduction losses and improve switching performance. A typical gate charge of 24 nC at 24 V gate-source voltage enables efficient switching, while maximum power dissipation of 68 W offers reliable thermal handling under demanding conditions.

Engineered for industrial-grade quality, this MOSFET operates reliably over a broad temperature range down to -55°C. The device withstands a maximum gate-source voltage of ±20 V to protect against voltage spikes, and its intrinsic forward voltage drop of 900 mV is optimized for power conversion efficiency.

Applications include industrial power supplies, server power modules, telecom rectifiers, and solar inverter systems, where high efficiency, low loss, and robust operation are critical. The CoolMOS C7 series is recognized for enabling energy-efficient solutions supporting both hard and soft switching techniques in modern electronic power systems.

Designed with super junction (SJ) technology for high voltage MOSFET performance. Suitable for hard and soft switching applications in industrial environments. 13 A continuous drain current and 600 V drain-source voltage ratings.

Maximum power dissipation of 68 W to maintain thermal stability. Typical gate charge of 24 nC for fast and efficient switching. Compact 3-pin TO-220 package for convenient through-hole mounting. Wide operating temperature range down to -55°C for industrial grade use.

Maximum gate-source voltage rating of ±20 V for enhanced device protection. Infineon CoolMOS C7 series ideal for server, telecom, and solar power applications. Explore our Electronics & Electricals categories for more high-performance MOSFETs designed for your industrial and commercial needs at EnvMart.

Infineon CoolMOS C7 N-Channel MOSFET 13 A 600 V Enhancement 3-Pin TO-220 IPP60R180C7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 13 A.

This MOSFET has a maximum drain-source voltage rating of 600 V.

The typical gate charge at a gate-source voltage of 24 V is 24 nC.

The maximum power dissipation rating is 68 W.

It features a maximum drain-source resistance of 180 mΩ.

This model operates reliably over a temperature range from -55°C to high temperatures.

It is designed for through-hole mounting with a TO-220 package.

The maximum gate-source voltage rating is ±20 V.

The dimensions are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.

This MOSFET is suitable for applications including industrial power supplies, server power modules, telecom rectifiers, and solar inverter systems.

This model features an N-channel type configuration.

It belongs to the CoolMOS C7 series.

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