Infineon CoolMOS P7 N-Channel MOSFET, 7 A, 800 V Enhancement Mode, 3-Pin TO-252 IPD80R750P7ATMA1

Infineon IPD80R750P7ATMA1 CoolMOS P7 N-Channel MOSFET is engineered for high-performance power switching applications, delivering a maximum continuous drain current of 7 A and a drain-source voltage rating of 800 V. The device features enhancement mode operation and is packaged in a compact 3-pin TO-252 surface mount format, allowing efficient thermal management and easy PCB integration.

Designed with Infineon's latest super junction technology, the CoolMOS P7 series sets a new benchmark for 800 V MOSFETs, combining high power density with ease of use. Its maximum power dissipation rating of 51 W enables the device to handle significant electrical loads in demanding environments.

The MOSFET's typical gate charge of 17 nC ensures fast switching speeds with reduced gate drive losses, suitable for power-efficient designs. The device supports operation up to 150°C, making it reliable for industrial, commercial, automotive auxiliary power, LED lighting, and low power charger applications.

Additional features include integrated Zener diode ESD protection, enhancing device robustness against transient voltage spikes. Forward voltage of 900 mV contributes to low conduction losses, improving overall system efficiency. The compact physical dimensions with a length of 6.73 mm, width of 6.22 mm, and height of 2.41 mm facilitate space-efficient circuit designs.

This MOSFET is ideal for use in hard and soft switching flyback topologies, powering LED drivers, low power adapters, audio amplification circuits, and other industrial power supply systems. It leverages over 18 years of Infineon's pioneering super junction technology to provide a reliable and cost-effective solution.

Features enhancement mode N-channel operation ensuring efficient switching performance. Package designed for surface mounting with 3 pins in TO-252 format. Maximum power dissipation of 51 W enables handling of significant loads.

Typical gate charge of 17 nC allows fast switching with low drive losses. Maximum operating temperature of 150°C supports reliable use in high-temperature environments. Optimized for hard and soft switching applications in LED lighting, chargers, audio, and industrial power supplies.

Integrated Zener diode provides ESD protection for improved device robustness. Compact dimensions: length 6.73 mm, width 6.22 mm, height 2.41 mm. Forward voltage of 900 mV ensures low conduction losses during operation. Explore more Infineon discrete semiconductor products at EnvMart for high reliability and performance MOSFET solutions.