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Infineon CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPA70R360P7SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA70R360P7SXKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12.5A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 26.5W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 900mV |
Key Features
- High-voltage 700 V drain capability suitable for power conversion applications.
- Supports continuous drain current up to 12.5 A for substantial load handling.
- Low on-resistance of 360 milliohms reduces conduction losses efficiently.
- Power dissipation rating of 26.5 W enables sustained thermal loads.
- Enhanced gate tolerance up to 30 V allows flexible drive voltages.
- Forward voltage drop of 0.9 V minimizes voltage losses during conduction.
- Packaged in through-hole TO-220 style for easy mounting and heat sink attachment.
- Wide operating temperature range from -40°C to +150°C ensures reliability in harsh environments.
Product Description
Infineon IPA70R360P7SXKSA1 is a CoolMOS P7 series N-Channel MOSFET engineered for industrial and power conversion applications. It offers a maximum drain-source voltage of 700 V and continuous drain current rating of 12.5 A, making it ideal for switching high-voltage circuits efficiently.
Designed with enhancement mode channel technology and supplied in a rugged 3-pin TO-220 through-hole package, this MOSFET supports ease of integration onto power assemblies and direct heat-sink mounting for optimal thermal management. Its ultra-low on-resistance of 360 milliohms minimizes conduction losses, enhancing overall efficiency.
The device can safely operate across extreme ambient temperatures from -40°C to +150°C, suitable for automotive and industrial environments requiring robust performance. Key features include a 30 V maximum gate-source voltage rating and a low forward voltage of 0.9 V, which helps in reducing power dissipation during switching operations.
700 V drain voltage enables use in high-voltage power supplies. 12.5 A continuous current supports demanding load conditions. 360 mΩ on-resistance reduces conduction power loss. 26.5 W power dissipation ensures thermal stability under load.
TO-220 through-hole package facilitates heat sinking and board mounting. Wide operational temperature range for harsh environment tolerance. Enhancement mode MOSFET suitable for discrete switching applications. 30 V gate-source voltage rating for standard gate drive voltages.
This MOSFET is widely used in switched-mode power supplies (SMPS), industrial power converters, discrete switch stages, and prototyping circuits requiring reliable high-voltage switch components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12.5 A, making it suitable for substantial load handling in power conversion applications.
It can handle a maximum drain-source voltage of 700 V, which is ideal for high-voltage power supplies.
The on-resistance is 360 milliohms, which helps in reducing conduction losses efficiently.
The power dissipation rating is 26.5 W, allowing it to sustain thermal loads during operation.
This model is packaged in a TO-220 style, which facilitates easy mounting and heat sink attachment.
It operates within a wide temperature range from -40°C to +150°C, ensuring reliability in harsh environments.
The maximum gate-source voltage is rated at 30 V, allowing for flexible drive voltages.
This MOSFET is suitable for applications such as switched-mode power supplies (SMPS) and industrial power converters.
It has a 3-pin configuration, which is standard for TO-220 packages.
This model utilizes an N-channel type, designed for enhancement mode operation.
The forward voltage drop is 0.9 V, which minimizes voltage losses during conduction.
The country of origin for this model is India.
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