Infineon CoolMOS C7 N-Channel MOSFET 8 A 650 V Enhancement 3-Pin TO-220 IPA65R190C7XKSA1

Infineon IPA65R190C7XKSA1 is a high-performance CoolMOS C7 N-Channel MOSFET featuring an 8 A continuous drain current and 650 V maximum drain-source voltage. It is designed with the enhancement mode and housed in a reliable 3-pin TO-220 package, making it suitable for industrial and commercial power management applications.

This MOSFET incorporates super junction technology pioneered by Infineon which enhances efficiency and reduces switching losses. Its low drain-source resistance of 190 mΩ helps minimize power dissipation, contributing to system cost and size savings by reducing cooling requirements.

The through-hole mount type supports easy implementation on standard printed circuit boards. The Infineon CoolMOS C7 series offers fast switching capabilities with improved reliability and reduced gate charge, ideal for power conversion, power supplies, and motor control systems.

This component is intended for use in electronics manufacturing, power management, and semiconductor applications where durability and efficient power handling are critical. Supports a maximum continuous drain current of 8 amperes.

Maximum drain-source voltage rating is 650 volts. Low 190 milliohm drain-source resistance for efficient switching. Enhancement mode for optimal conductivity and control. 3-pin TO-220 package for easy through-hole mounting.

CoolMOS C7 technology for superior power efficiency. Suitable for industrial, commercial, and power management applications. Non-compliant with automotive standards. Explore EnvMart’s extensive range of semiconductor components and discrete MOSFETs by Infineon for reliable, efficient power electronic solutions.