Infineon CoolMOS P7 N-Channel MOSFET 12 A 600 V Enhancement 3-Pin TO-220 IPA60R280P7XKSA1

Infineon IPA60R280P7XKSA1 CoolMOS P7 N-Channel MOSFET is a high-voltage power transistor designed for efficient power management applications. It features a maximum continuous drain current of 12 A and a maximum drain-source voltage of 600 V. Constructed using advanced super junction technology, this 7th generation CoolMOS device offers optimized switching performance with very low conduction and switching losses.

The device comes in a 3-pin TO-220 package for reliable through-hole mounting, making it suitable for industrial, power supply, and motor control applications. This enhancement mode MOSFET is designed to provide superior body diode ruggedness and excellent electrostatic discharge tolerance greater than 2 kV (HBM standard).

Its low drain-source resistance of 280 milliohms reduces power dissipation and increases overall system efficiency. The robust design ensures suitability for both hard and soft switching operation, offering reliable performance in demanding electronic circuits.

Infineon's CoolMOS P7 series represents a significant advancement over previous generations, delivering improved ease of use and compact power conversion solutions. This MOSFET supports applications across industrial electronics, power supplies, HVAC systems, and various manufacturing equipment.

Uses CoolMOS P7 super junction technology for efficient switching. Enhancement mode N-Channel for precise control and switching. 3-pin TO-220 package for straightforward through-hole mounting. 12 A maximum continuous drain current capacity.

600 V maximum drain-source voltage. Low on-resistance of 280 milliohms for reduced losses. Robust body diode and ESD protection. Ideal for industrial, laboratory, and power management applications. Explore more MOSFET products and power semiconductors on EnvMart to find solutions tailored to your application's demanding requirements.