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Infineon HEXFET N-Channel MOSFET, 35 A, 100 V Enhancement Mode, 3-Pin TO-252 AUIRFR540Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.22mm |
| Model | AUIRFR540Z |
| Width | 6.73mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 28.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 91W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The device operates in enhancement mode for efficient switching.
- It features an ultra-low on-resistance of 28.5 milliohms for reduced conduction losses.
- Maximum power dissipation is rated at 91 W, supporting high thermal performance.
- Designed for automotive and industrial applications with AEC-Q101 qualification.
- Operates reliably over a wide temperature range from -55°C to 175°C junction temperature.
- Typical gate charge is 39 nC, enabling fast switching speeds.
- Maximum gate-source voltage tolerance is 20 V for safe operation.
Product Description
Infineon AUIRFR540Z HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power management and switching in automotive and industrial electronics. Rated for a maximum continuous drain current of 35 amperes and a maximum drain-source voltage of 100 volts, this 3-pin TO-252 package MOSFET operates in enhancement mode and offers an ultra-low on-resistance of 28.5 milliohms, minimizing conduction losses and enhancing power efficiency.
The device's robust design supports a maximum power dissipation of 91 watts, while being capable of operating reliably at junction temperatures up to 175°C and down to -55°C for cold-start conditions. Its typical gate charge of 39 nanocoulombs facilitates fast switching, making it suitable for high-frequency applications. The maximum gate-source voltage withstand of 20 volts ensures device safety during operation.
With compact dimensions of 6.22 mm length, 6.73 mm width, and 2.39 mm height, the AUIRFR540Z integrates easily into space-constrained designs. It meets automotive industry standards with AEC-Q101 qualification, ensuring high reliability under harsh environments.
The device operates in enhancement mode for efficient switching. Ultra-low on-resistance of 28.5 milliohms reduces conduction losses. Supports power dissipation up to 91 watts for thermal stability. Wide operating temperature range from -55°C to 175°C junction temperature.
Typical gate charge of 39 nC enables fast switching performance. Maximum gate-source voltage rating of 20 volts allows for safe operation. Compact TO-252 package with 3 pins enables easy PCB integration. Automotive-grade qualification under AEC-Q101 ensures reliability.
This MOSFET is ideal for use in automotive power electronics, industrial motor drives, power supplies, and other applications requiring efficient power switching and thermal management. Its design balances performance with durability, making it a reliable component in demanding environments.
Explore the extensive selection of MOSFETs at EnvMart for diverse industrial, manufacturing, and automotive needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 amperes.
The maximum drain-source voltage for the AUIRFR540Z is 100 volts.
It features an ultra-low on-resistance of 28.5 milliohms, which helps reduce conduction losses.
The typical gate charge is 39 nanocoulombs, enabling fast switching speeds.
The AUIRFR540Z operates reliably over a wide temperature range from -55°C to 175°C junction temperature.
This model supports a maximum power dissipation of 91 watts, ensuring high thermal performance.
It is packaged in a compact TO-252 package with 3 pins, suitable for surface mounting.
This MOSFET is qualified under the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The maximum gate-source voltage tolerance is 20 volts for safe operation.
It is designed for automotive power electronics, industrial motor drives, and power supplies requiring efficient power switching.
The forward voltage for this model is rated at 1.3 volts.
The dimensions are 6.22 mm in length, 6.73 mm in width, and 2.39 mm in height.
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