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onsemi NTMFS N-Channel MOSFET 116 A 100 V Enhancement Mode Surface Mount 8-Pin DFN Package NTMFSC4D2N10MC
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 950μm |
| Length | 5.1mm |
| Model | NTMFSC4D2N10MC |
| Width | 6.25mm |
| Mount Type | Surface |
| Series | NTMFS |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 116A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 4.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 122W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 850mV |
Key Features
- Offers a maximum continuous drain current of 116 amperes for demanding power loads.
- Operates with a maximum drain-source voltage of 100 volts suitable for medium voltage applications.
- Features an 8-pin DFN surface mount package delivering compact design and excellent thermal performance.
- Enhanced N-channel MOSFET with low drain-source resistance of 4.3 milliohms for minimal power loss.
- Maximum power dissipation rating of 122 watts ensures reliable operation under high load.
- Operates reliably in temperatures ranging from -55°C to 175°C for robust industrial use.
- Typical gate charge is 27 nanocoulombs facilitating efficient switching speeds.
- Rated for a maximum gate-source voltage of 20 volts, providing gate driver compatibility.
Product Description
onsemi NTMFSC4D2N10MC is an N-Channel MOSFET designed for power semiconductor applications requiring high current handling and efficient switching characteristics.
This MOSFET features a maximum continuous drain current of 116 amperes, making it ideal for synchronous rectification and DC-DC converter circuits in industrial and commercial electronics.
It operates with a maximum drain-source voltage of 100 volts and is packaged in a compact 8-pin DFN surface mount package that facilitates efficient PCB layout and thermal management.
The device offers a low maximum drain-source resistance (Rds(on)) of 4.3 milliohms, reducing conduction losses and improving overall system efficiency. It supports enhancement mode channel operation with typical gate charge of 27 nanocoulombs, enabling fast switching transitions.
Operating temperature range of -55°C to 175°C ensures suitability in harsh environments found in automotive, industrial, and power management systems. High continuous drain current capacity of 116 A. Maximum drain-source voltage of 100 V for medium voltage applications.
Surface mount 8-pin DFN package for compact footprint and thermal efficiency. Low Rds(on) of 4.3 mΩ minimizes power loss. Power dissipation rating at 122 W supports high power circuits. Wide operating temperature range from -55°C up to 175°C.
Typical gate charge of 27 nC ensures fast switching. Maximum gate-source voltage of 20 V compatible with standard driver ICs. Compact physical dimensions: 5.1 mm (L) x 6.25 mm (W) x 0.95 mm (H). Compliant with Pb-free and RoHS environmental regulations.
This MOSFET is primarily used in industrial power supplies, power management units, automotive electronics, telecommunications, and other applications requiring reliable high-current switching components.
Its surface mount package and robust electrical specifications make it a preferred choice for designing efficient and reliable power control systems. Explore more power semiconductor products and components for your electronic design needs with EnvMart.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The onsemi NTMFSC4D2N10MC has a maximum continuous drain current of 116 amperes, suitable for demanding power loads.
This model operates with a maximum drain-source voltage of 100 volts, making it suitable for medium voltage applications.
The NTMFSC4D2N10MC is packaged in an 8-pin DFN surface mount package, which allows for a compact design and efficient thermal performance.
It features a low maximum drain-source resistance (Rds(on)) of 4.3 milliohms, which minimizes power loss during operation.
The maximum power dissipation rating for this model is 122 watts, ensuring reliable operation under high load conditions.
The typical gate charge for the NTMFSC4D2N10MC is 27 nanocoulombs, facilitating efficient switching speeds.
This MOSFET operates reliably in temperatures ranging from -55°C to 175°C, making it suitable for harsh environments.
The NTMFSC4D2N10MC is rated for a maximum gate-source voltage of 20 volts, which provides compatibility with standard gate driver ICs.
The physical dimensions of this model are 5.1 mm in length, 6.25 mm in width, and 0.95 mm in height.
This MOSFET is primarily used in industrial power supplies, power management units, automotive electronics, and telecommunications.
The NTMFSC4D2N10MC features an enhancement mode N-channel design, which is common for power switching applications.
The country of origin for the onsemi NTMFSC4D2N10MC is India.
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