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onsemi PowerTrench N-Channel MOSFET, 265A Continuous Drain Current, 60V Maximum Drain Source Voltage, 395W Power FDP025N06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.7mm |
| Length | 9.9mm |
| Model | FDP025N06 |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 265A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 395W |
| Typical Gate Charge Qg @ Vgs | 174nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| onsemi PowerTrench N-Channel MOSFET, 265 A, 60 V Enhancement, 3-Pin TO-220Brand | onsemi |
Key Features
- Enhanced channel mode ensures efficient switching performance.
- Maximum power dissipation up to 395W supports heavy load conditions.
- Low maximum drain source resistance of 2.5mΩ reduces conduction losses.
- Typical gate charge of 174nC ensures fast switching speeds.
- Wide operating temperature range from -55°C to 175°C for reliable industrial use.
- Through hole mount type with 3-pin package for easy PCB integration.
- Compact dimensions with length 9.9mm, width 4.5mm, and height 15.7mm.
- Maximum gate-source voltage rated at ±20V for device protection.
Product Description
onsemi FDP025N06 PowerTrench N-Channel MOSFET is engineered for demanding industrial and power electronics applications requiring high current and voltage capability. With a maximum continuous drain current of 265A and a maximum drain-source voltage of 60V, this device excels in efficiency and power handling.
The device features an enhancement-mode channel providing robust conduction characteristics and low on-resistance (2.5mΩ), minimizing power loss and heat generation during operation. Its high maximum power dissipation rating of 395W allows for sustained high power loads.
Slim in form factor, the TO-220 3-pin package facilitates ease of mounting on through-hole PCBs commonly used in industrial, manufacturing, and power conversion equipment. The gate has a typical charge of 174nC enabling swift switching, beneficial in rapid frequency power circuits.
Operating reliably across a broad temperature range (-55°C to 175°C), this MOSFET suits applications including industrial motor drives, power supplies, automotive electronics, and other harsh environment electronics.
Additional protection is ensured by a gate-source voltage maximum of ±20V and a forward voltage of 1.3V, which supports effective device integrity and durability. Enhanced channel mode ensures efficient switching performance.
Maximum power dissipation up to 395W supports heavy load conditions. Low maximum drain source resistance of 2.5mΩ reduces conduction losses. Typical gate charge of 174nC ensures fast switching speeds. Wide operating temperature range from -55°C to 175°C for reliable industrial use.
Through hole mount type with 3-pin package for easy PCB integration. Compact dimensions with length 9.9mm, width 4.5mm, and height 15.7mm. Maximum gate-source voltage rated at ±20V for device protection.
This MOSFET is an ideal choice for use in industrial automation, power management, motor control systems, and other electronic circuits requiring high current handling in a compact package.
Explore a wide selection of semiconductor components including MOSFETs at EnvMart for your next project or production needs.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 265A.
The maximum drain-source voltage for this model is 60V.
It has a maximum power dissipation rating of 395W.
The typical gate charge is 174nC, which facilitates fast switching speeds.
This MOSFET has dimensions of 9.9mm in length, 4.5mm in width, and 15.7mm in height.
The maximum gate-source voltage is rated at ±20V.
It operates reliably across a temperature range from -55°C to 175°C.
This model uses a through-hole mount type with a 3-pin package.
The maximum drain-source resistance is 2.5mΩ, which helps reduce conduction losses.
It features an enhancement-mode channel, providing robust conduction characteristics.
This MOSFET is suitable for applications such as industrial motor drives, power supplies, and automotive electronics.
The forward voltage for this device is 1.3V.
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