Infineon HEXFET N-Channel MOSFET 2.7 A 60 V Enhancement 3-Pin SOT-23 IRLML0060TRPBF

Infineon IRLML0060TRPBF is a HEXFET N-Channel Enhancement MOSFET designed for low-voltage switching and power management in compact surface-mount applications. It supports a maximum continuous drain current of 2.7 A and can withstand a maximum drain-source voltage of 60 V, providing robust voltage headroom in various circuits.

The device is housed in a space-saving 3-pin SOT-23 package measuring 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, making it well suited for designs with tight PCB layouts.

Key features include a low on-resistance of 92mΩ to reduce conduction losses, a typical gate charge of only 2.5 nC for efficient switching transitions, and tolerance to gate-source voltages up to ±16 V, allowing flexible gate drive strategies.

Performance is rated for operation from -55°C to 150°C, enabling use in demanding thermal environments without performance degradation.

Applications for this MOSFET include DC-DC converters in compact electronics, high-side or low-side switching in controller circuits, load management in battery-operated systems, and motor-driver front end for small actuators.

Low on-resistance for energy-efficient conduction. Enhancement mode operation for controlled switching. Wide operating temperature range for thermal reliability. Compact SOT-23 package for space-constrained designs. Efficient switching with low typical gate charge.

High gate-source voltage tolerance for flexible drive voltages. Moderate power dissipation to minimize thermal stress. Versatile usage in power management and switching applications. Explore our Electronics & Electricals category at EnvMart for more semiconductor devices and power components suitable for industrial and commercial applications.