Infineon HEXFET N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263 IRF2807STRLPBF

Infineon IRF2807STRLPBF is a HEXFET power MOSFET designed for demanding power electronic applications requiring high current and voltage handling capabilities. This N-channel MOSFET features a maximum continuous drain current of 82 A and a maximum drain-source voltage rating of 75 V, making it well-suited for switching and amplification tasks in industrial, automotive, and power management systems.

Encapsulated in a compact TO-263 surface mount package with three pins, the device facilitates easy integration into printed circuit boards for automated assembly processes. The advanced HEXFET technology used in this MOSFET offers extremely low on-resistance per silicon area, enhancing efficiency by minimizing power losses during conduction.

The IRF2807STRLPBF is rated for high maximum power dissipation at 230 W, allowing it to sustain high loads without compromising device integrity. It operates reliably across a wide temperature range from -55°C to 175°C, catering to harsh industrial and automotive environments. Its ruggedized design includes avalanche ratings, promoting robustness against transient voltage spikes.

Additional electrical characteristics include a maximum drain-source resistance of only 13 milliohms, which reduces conduction losses, and a typical gate charge of 160 nC at Vgs, supporting fast switching speeds. The device guarantees gate protection with a maximum gate-source voltage of ±20 V and features a forward voltage drop of 1.2 V, optimizing overall efficiency.

This MOSFET is ideal for applications in power supplies, motor drives, DC-DC converters, battery management, and other scenarios requiring high current switching with low losses. It is manufactured in China and does not carry specific automotive or other certifications.

Advanced HEXFET technology ensures extremely low on-resistance for efficient power switching. Maximum continuous drain current of 82 A supports high power applications. 75 V maximum drain-source voltage delivers reliable switching performance.

TO-263 surface mount package with 3 pins allows easy PCB assembly. Maximum power dissipation rated at 230 W for robust thermal management. Minimum operating temperature of -55°C enables operation in extreme environments.

Maximum operating temperature up to 175°C ensures durability under heat stress. Very low maximum drain-source resistance of 13 milliohms reduces conduction losses. Fast switching achieved with typical gate charge 160 nC at Vgs.

Maximum gate-source voltage of ±20 V ensures gate reliability and protection. Forward voltage of 1.2 V suitable for efficient power conversion. Discover more components and power semiconductors in EnvMart's Electronics & Electricals catalog to find the right device solutions for your industrial and manufacturing projects.