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Infineon HEXFET N-Channel MOSFET 170 A 75 V Surface Mount TO-263 Package 3-Pin IRF2907ZSTRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRF2907ZSTRLPBF |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 270nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 170 A for high power handling.
- Maximum drain-source voltage rating of 75 V ensures durability under high voltage conditions.
- Surface mount TO-263 package with 3 pins for easy PCB integration.
- Extremely low on-resistance for improved efficiency and reduced power loss.
- Capable of withstanding a maximum power dissipation of 300 W during operation.
- Wide operating temperature range from -55°C to 175°C to suit various industrial environments.
- Typical gate charge is 270 nC at Vgs, ensuring fast switching speeds.
- Maximum gate-source voltage of ±20 V protects against voltage spikes.
Product Description
Infineon IRF2907ZSTRLPBF is a HEXFET N-Channel MOSFET engineered for high-current and voltage demanding applications such as industrial power converters, motor control, and switching regulators. Featuring a maximum continuous drain current rating of 170 A and a maximum drain-source voltage of 75 V, this MOSFET balances robust power handling with excellent switching performance.
This device comes in a surface mount TO-263 package with 3 pins, facilitating compact and reliable PCB mounting. Its extremely low drain-source resistance of 4.5 mΩ minimizes conduction losses, improving overall system efficiency.
Designed to handle a maximum power dissipation of 300 W, the IRF2907ZSTRLPBF MOSFET operates reliably in harsh environments with an operating temperature range extending from -55°C to 175°C. Its maximum gate-source voltage of ±20 V and typical gate charge of 270 nC contribute to fast switching capabilities and protection against voltage surges.
Being lead-free and RoHS compliant, this MOSFET supports eco-conscious design practices. It is suitable for use in industrial automation, power management, and commercial electronic equipment where high reliability and efficiency are critical.
Applications include power supplies, industrial motor controls, and high-frequency switching circuits. Its advanced processing technology and robust electrical characteristics make it ideal for demanding conditions where power density and thermal management are priorities.
Maximum continuous drain current of 170 A. Maximum drain-source voltage of 75 V. TO-263 package with 3 pins designed for surface mounting. Low on-resistance of 4.5 mΩ enhances efficiency. Power dissipation capability up to 300 W.
Wide operational temperature from -55°C to 175°C. Typical gate charge of 270 nC for fast switching. Gate-source voltage tolerance of ±20 V. Lead-free and RoHS compliant. Explore our MOSFET category for more Infineon products and related semiconductor components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the IRF2907ZSTRLPBF is 170 A, making it suitable for high power applications.
This model has a maximum drain-source voltage rating of 75 V, ensuring it can handle high voltage conditions effectively.
The IRF2907ZSTRLPBF comes in a surface mount TO-263 package with 3 pins, designed for easy PCB integration.
It features an extremely low on-resistance of 4.5 mΩ, which helps to minimize conduction losses and improve efficiency.
The maximum power dissipation capability of this model is 300 W, allowing it to operate reliably under demanding conditions.
This MOSFET operates within a wide temperature range from -55°C to 175°C, suitable for various industrial environments.
The typical gate charge is 270 nC at Vgs, which contributes to its fast switching capabilities.
The maximum gate-source voltage for this model is ±20 V, providing protection against voltage spikes.
Yes, the IRF2907ZSTRLPBF is lead-free and RoHS compliant, supporting eco-conscious design practices.
It is suitable for applications such as industrial power converters, motor control, and high-frequency switching circuits.
The forward voltage for this model is 1.3 V, which is relevant for its performance in circuits.
This device features an N-channel configuration, which is typical for power MOSFETs used in high-current applications.
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