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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRFZ46ZSTRLPBF |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 51A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 82W |
| Typical Gate Charge Qg @ Vgs | 46nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Infineon IRFZ46ZSTRLPBF HEXFET N-Channel MOSFET is a high-performance power semiconductor designed for industrial, electronic component, and power management applications. It supports a maximum continuous drain current of 51 A and a drain-source voltage rating of 55 V, making it suitable for medium-power electronic circuits requiring efficient switching and durability.
This 3-pin device is housed in a TO-263 surface mount package that allows for easy integration into compact PCB layouts while maintaining effective heat dissipation. The low on-resistance of 13.6 milliohms minimizes conduction losses, ensuring energy efficiency and enhancing overall system reliability.
The MOSFET is rated for power dissipation of up to 82 W and operational temperature range from -55°C to 175°C, enabling it to function reliably in demanding industrial and commercial environments, including power supplies, motor controls, and synchronous rectification.
Key electrical parameters such as a maximum gate-source voltage of 20 V, typical forward voltage of 1.3 V, and typical gate charge of 46 nC provide excellent switching characteristics for low frequency applications.
Continuous drain current rating of 51 A. Drain-source voltage of 55 V. Surface mount TO-263 package with 3 pins. Low drain-source resistance of 13.6 mΩ enhances efficiency. Maximum power dissipation is 82 W. Wide operating temperature from -55°C to 175°C.
Typical forward voltage of 1.3 V. Maximum gate-source voltage of 20 V. Typical gate charge of 46 nC.
This device is versatile for a wide range of applications such as industrial power electronics, power management, and electronic component manufacturing. Its sturdy design and high current handling capacity make it suitable for environments requiring rugged and efficient semiconductor performance.
Browse the extensive selection of Infineon power semiconductors and MOSFETs at EnvMart for efficient, reliable components suitable for your electronic designs and industrial solutions.
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