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Infineon HEXFET N-Channel MOSFET 51 A 55 V 3-Pin TO-263 IRFZ46ZSTRLPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IRFZ46ZSTRLPBF
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 51A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 13.6mΩ
Maximum Power Dissipation Pd 82W
Typical Gate Charge Qg @ Vgs 46nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • Features a continuous drain current rating of 51 A for robust performance.
  • Operates at a maximum drain-source voltage of 55 V suitable for medium power circuits.
  • Comes in a 3-pin TO-263 package optimized for surface mounting.
  • Low maximum drain-source resistance of 13.6 milliohms reduces power loss.
  • Maximum power dissipation rating of 82 W supports efficient heat management.
  • Wide operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
  • Gate-source voltage maximum rating of 20 V protects device integrity.
  • Typical forward voltage of 1.3 V and gate charge of 46 nC support efficient switching.

Product Description

Infineon IRFZ46ZSTRLPBF HEXFET N-Channel MOSFET is a high-performance power semiconductor designed for industrial, electronic component, and power management applications. It supports a maximum continuous drain current of 51 A and a drain-source voltage rating of 55 V, making it suitable for medium-power electronic circuits requiring efficient switching and durability.

This 3-pin device is housed in a TO-263 surface mount package that allows for easy integration into compact PCB layouts while maintaining effective heat dissipation. The low on-resistance of 13.6 milliohms minimizes conduction losses, ensuring energy efficiency and enhancing overall system reliability.

The MOSFET is rated for power dissipation of up to 82 W and operational temperature range from -55°C to 175°C, enabling it to function reliably in demanding industrial and commercial environments, including power supplies, motor controls, and synchronous rectification.

Key electrical parameters such as a maximum gate-source voltage of 20 V, typical forward voltage of 1.3 V, and typical gate charge of 46 nC provide excellent switching characteristics for low frequency applications.

Continuous drain current rating of 51 A. Drain-source voltage of 55 V. Surface mount TO-263 package with 3 pins. Low drain-source resistance of 13.6 mΩ enhances efficiency. Maximum power dissipation is 82 W. Wide operating temperature from -55°C to 175°C.

Typical forward voltage of 1.3 V. Maximum gate-source voltage of 20 V. Typical gate charge of 46 nC.

This device is versatile for a wide range of applications such as industrial power electronics, power management, and electronic component manufacturing. Its sturdy design and high current handling capacity make it suitable for environments requiring rugged and efficient semiconductor performance.

Browse the extensive selection of Infineon power semiconductors and MOSFETs at EnvMart for efficient, reliable components suitable for your electronic designs and industrial solutions.

Infineon HEXFET N-Channel MOSFET 51 A 55 V 3-Pin TO-263 IRFZ46ZSTRLPBF
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Frequently Asked Questions

The maximum continuous drain current rating for this model is 51 A.

It operates at a maximum drain-source voltage of 55 V, suitable for medium power circuits.

This MOSFET comes in a 3-pin TO-263 package optimized for surface mounting.

The maximum power dissipation rating is 82 W, which supports efficient heat management.

The maximum gate-source voltage rating is 20 V, which protects the device integrity.

The typical gate charge is 46 nC, supporting efficient switching.

It has a wide operating temperature range from -55°C to 175°C, ensuring reliability in harsh environments.

The maximum drain-source resistance is 13.6 milliohms, which helps reduce power loss.

The typical forward voltage is 1.3 V, contributing to its efficient performance.

This model is suitable for industrial power electronics, power management, and electronic component manufacturing.

The TO-263 package has 3 pins, facilitating easy integration into compact PCB layouts.

This model belongs to the HEXFET series, known for high-performance power semiconductors.

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