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Infineon 600V CoolMOS P7 N-Channel MOSFET, 76 A Continuous Drain Current, 600 V Voltage, 3-Pin TO-247 IPW60R037P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPW60R037P7XKSA1 |
| Mount Type | Through Hole |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 76A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 37mΩ |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 121nC |
| Maximum Gate Source Voltage Vgs | 4V |
| Forward Voltage Vf | 900mV |
Key Features
- Maximum continuous drain current of 76 amperes ensures robust handling of high current loads.
- Rated for 600 volts maximum drain-source voltage for demanding voltage environments.
- 3-pin TO-247 through-hole package supports reliable mounting and thermal management.
- Inherently low gate charge of 121 nC reduces switching losses and improves efficiency.
- Maximum power dissipation rating of 255 watts supports substantial thermal loads.
- Maximum drain-source resistance of 37 milliohms minimizes conduction losses.
- Operates reliably between -55°C to 150°C ambient temperature range.
- Includes rugged body diode with integrated RG for reduced MOSFET oscillation sensitivity.
Product Description
Infineon IPW60R037P7XKSA1 is a 600V CoolMOS P7 N-Channel MOSFET designed for applications requiring high efficiency, low switching losses, and robust operation. Featuring a maximum continuous drain current of 76 A and a drain-source voltage of 600 V, this device supports demanding power electronic circuits.
The device is housed in a 3-pin TO-247 through-hole package, facilitating excellent thermal dissipation and mechanical stability. Its low gate charge of 121 nC contributes to reduced switching losses, improving overall system efficiency and performance.
The rugged body diode, integrated gate resistance (RG), and low drain-source resistance (37 mΩ max) enhance the device’s robustness and switching performance. With a maximum power dissipation rating of 255 W, it can handle substantial thermal loads in industrial, automotive, and power management applications.
Designed to operate reliably in ambient temperatures from -55°C up to 150°C, it is suitable for harsh operating environments. The typical forward voltage drop of 900 mV helps maintain conduction efficiency during operation.
Maximum continuous drain current of 76 A ensures robust performance. 600 V drain-source voltage rating for high voltage applications. 3-pin TO-247 package supports through-hole mounting and effective heat dissipation. Low typical gate charge of 121 nC minimizes switching power losses.
Maximum power dissipation rating of 255 W for thermal robustness. Rugged body diode and integrated RG enhance oscillation immunity. Operation in wide temperature range from -55°C to 150°C. Typical forward voltage drop of 900 mV for efficient conduction.
This Infineon CoolMOS P7 MOSFET is ideal for use in industrial power supplies, motor drives, automotive electronics, and other high-performance power conversion systems. Its combination of low losses and reliable protection features makes it a versatile choice for engineers demanding efficiency and robustness.
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Frequently Asked Questions
The maximum continuous drain current of the Infineon IPW60R037P7XKSA1 is 76 amperes.
This model is rated for a maximum drain-source voltage of 600 volts, making it suitable for high voltage applications.
The device is housed in a 3-pin TO-247 through-hole package, which supports reliable mounting and thermal management.
The typical gate charge for the Infineon IPW60R037P7XKSA1 is 121 nanocoulombs, which helps to minimize switching losses.
It has a maximum power dissipation rating of 255 watts, allowing it to handle substantial thermal loads.
The maximum drain-source resistance for this MOSFET is 37 milliohms, which minimizes conduction losses.
This model operates reliably within an ambient temperature range of -55°C to 150°C.
Yes, this MOSFET includes a rugged body diode with integrated gate resistance for reduced oscillation sensitivity.
It is suitable for industrial power supplies, motor drives, automotive electronics, and other high-performance power conversion systems.
The typical forward voltage drop is 900 millivolts, which helps maintain conduction efficiency during operation.
This model features an N-channel configuration, which is common for power applications.
The maximum gate-source voltage for this device is 4 volts.
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