Infineon HEXFET N-Channel MOSFET 320 A 40 V 3-Pin TO-263 IRFS7434TRLPBF

Infineon IRFS7434TRLPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power switching applications. This MOSFET features a maximum continuous drain current of 320 amperes and a maximum drain-source voltage of 40 volts, making it suitable for demanding industrial and electronic power management tasks.

It utilizes HEXFET technology that provides lower thermal resistance and faster switching than conventional MOSFETs. The device comes in a three-pin TO-263 surface-mount package, ideal for compact printed circuit board designs.

With a low maximum drain-source resistance of 1.6 milliohms and a maximum power dissipation rating of 294 watts, this MOSFET efficiently handles high currents while minimizing heat generation. It can operate safely from -55°C to 175°C, accommodating harsh environmental conditions in industrial, automotive, and power supply applications.

The maximum gate-source voltage is 20 volts to ensure reliable switching, complemented by a typical gate charge of 324 nanocoulombs for fast response times. A forward voltage of 1.3 volts further enhances conduction efficiency while reducing power losses.

This Infineon MOSFET is well-suited for use in power converters, motor drives, power supplies, and other electronic equipment requiring high current and voltage handling capabilities.

Employs HEXFET technology for efficient switching performance. Designed for surface mount use with three pins in a TO-263 package type. Maximum drain-source resistance of 1.6 milliohms. Supports maximum power dissipation of 294 watts.

Operating temperature range from -55°C to 175°C. Maximum gate-source voltage rating of 20 volts. Typical gate charge at Vgs of 324 nanocoulombs. Forward voltage rated at 1.3 volts. Explore our broad range of Infineon power semiconductors and electronic components at EnvMart to meet industrial, automotive, and electronic design requirements.