Infineon HEXFET N-Channel MOSFET 180 A 40 V 3-Pin TO-263 Surface Mount IRF1404ZSTRLPBF

The Infineon IRF1404ZSTRLPBF is a HEXFET N-Channel MOSFET designed to deliver high performance for power management applications. It features a maximum continuous drain current of 180 A and maximum drain-source voltage of 40 V, making it suitable for demanding industrial and electronic applications requiring efficient switching and low conduction losses.

This MOSFET comes in a surface mount TO-263 package with 3 pins, enabling easy integration into compact PCB layouts. The device offers a low drain-source resistance of 3.7 milliohms, which ensures minimal power loss and heat generation during operation.

The typical gate charge of 150 nC at specified gate voltage supports quick switching speeds, improving efficiency in power circuits such as DC-DC converters, motor controls, power supplies, and inverters. It can safely dissipate up to 200 watts of power, enabling its use in high power environments.

Operating temperature range extends from -55°C to a maximum junction temperature of 175°C, providing reliability in harsh and high-temperature conditions. The maximum gate-source voltage rating of 20 V provides enhanced robustness against voltage spikes during switching.

The forward voltage drop of 1.3 V ensures efficient conduction. The device is lead-free and aligns with current environmental standards, supporting compliance requirements in electronics manufacturing.

This power MOSFET is ideal for applications in industrial electronics, automotive systems, power management, and other domains requiring durable and efficient switch components. Its robust design and performance attributes offer system designers a reliable solution for high current and voltage power switching needs.

This MOSFET supports a maximum continuous drain current of 180 A. The maximum drain-source voltage is rated at 40 V. Low drain-source resistance of 3.7 milliohms enhances efficiency. Typical gate charge is 150 nC at Vgs.

Maximum power dissipation is 200 W allowing robust operation. Operating temperature ranges from -55°C up to 175°C junction temperature. Maximum gate-source voltage is 20 V ensuring safe switching. Designed for surface mount in a 3-pin TO-263 package.

Forward voltage drop is 1.3 V for efficient conduction. Lead-free and compliant with environmental standards. Explore the Infineon range and other semiconductor components at EnvMart for reliable industrial and electronic solutions.