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Infineon 600V CoolMOS P7 N-Channel MOSFET, 9 A Continuous Current, 600 V Drain-Source Voltage, TO-252 IPD60R360P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.35mm |
| Length | 6.65mm |
| Model | IPD60R360P7ATMA1 |
| Width | 6.42mm |
| Mount Type | Surface |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports a maximum continuous drain current of 9 A for substantial load handling.
- Operates at a maximum drain source voltage of 600 V for high voltage designs.
- Features low 360mΩ on-state resistance reducing conduction losses.
- Has a typical gate charge of 13 nC to optimize switching energy and reduce stress.
- Provides a maximum gate-to-source voltage of 20 V allowing robust gate drive margins.
- Supports a maximum power dissipation of 41 W ensuring good thermal capacity.
- Suitable for surface mount assembly with TO-252 package for easy integration.
- Operates effectively within a temperature range of -55°C to 150°C for harsh environments.
Product Description
Infineon IPD60R360P7ATMA1 600V CoolMOS P7 N-Channel MOSFET is a high-voltage N-channel switching transistor engineered for surface-mounted power conversion and switching applications. It supports a 9 A maximum continuous drain current and a 600 V maximum drain source voltage, facilitating high-performance and efficient power management.
Designed with a 360mΩ maximum drain source resistance, this MOSFET minimizes conduction loss for optimized energy efficiency. Its low typical gate charge of 13 nC allows reduced switching energy, making it suitable for high-frequency switching applications. The device withstands a maximum gate-to-source voltage of 20 V, providing robust drive margins and increased reliability in demanding electrical circuits.
The IPD60R360P7ATMA1 features a TO-252 surface-mount package with three pins, enabling easy PCB integration with proper land patterning and thermal vias for heat dissipation. It supports a wide operating temperature range from -55°C to 150°C, making it suitable for use in industrial, telecom power distribution, motor drive front ends, and offline switch-mode power supplies where thermal and environmental variances are common.
This MOSFET is designed for various industrial and commercial applications including DC-DC converters, bridge and clamped switching topologies, and modules requiring reliable power conversion. Its maximum power dissipation of 41 W indicates significant thermal loading capability, which coupled with an optimal package design ensures durability and stable operation.
Supports high-voltage designs with 600 V drain source voltage. Substantial load capability with 9 A continuous drain current. Low conduction losses due to 360mΩ on-resistance. Reduced switching energy with 13 nC typical gate charge.
Robust 20 V maximum gate to source voltage. Thermally capable with 41 W power dissipation. Surface-mount TO-252 package with 3 pins. Wide temperature operation from -55°C to 150°C. Ideal for industrial, laboratory, motor drive, and telecom power modules.
Explore the full range of Infineon MOSFET power devices and associated components at EnvMart for your electronic assembly and design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9 A, allowing for substantial load handling in various applications.
It operates at a maximum drain-source voltage of 600 V, making it suitable for high-voltage designs.
The maximum drain-source resistance is 360 mΩ, which helps to minimize conduction losses.
It has a typical gate charge of 13 nC, which optimizes switching energy and reduces stress during operation.
The maximum gate-to-source voltage is 20 V, providing robust gate drive margins.
It supports a maximum power dissipation of 41 W, ensuring good thermal capacity for various applications.
The dimensions of the TO-252 package are 6.65 mm in length, 6.42 mm in width, and 2.35 mm in height.
It operates effectively within a temperature range of -55°C to 150°C, suitable for harsh environments.
This MOSFET features a total of 3 pins, facilitating surface mount assembly.
It is an N-channel MOSFET, designed for enhancement mode operation.
This model is suitable for industrial applications including DC-DC converters, motor drive front ends, and offline switch-mode power supplies.
The country of origin for this MOSFET is India.
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