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Infineon 700V CoolMOS P7 N-Channel MOSFET, 10 A, 700 V, 3-Pin TO-220 IPAN70R450P7SXKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.85mm
Length 10.68mm
Model IPAN70R450P7SXKSA1
Width 16.15mm
Mount Type Through Hole
Series 700V CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -40°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 450mΩ
Channel Mode N
Maximum Power Dissipation Pd 22.7W
Typical Gate Charge Qg @ Vgs 13.1nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 900mV

Key Features

  • The device is designed for low power switched-mode power supply applications.
  • It features a maximum drain-source resistance of 450 milliohms ensuring efficient conduction.
  • Operates safely between -40°C and 150°C for reliable thermal performance.
  • Equipped with a 3-pin through-hole TO-220 mount for straightforward PCB integration.
  • Maximum gate-source voltage rating is 30 V, suitable for standard gate drive circuits.
  • Capable of dissipating a maximum power of 22.7 W under thermal constraints.
  • The typical gate charge is 13.1 nC at the specified gate voltage, enabling fast switching.
  • Forward voltage drop is approximately 900 mV improving power efficiency.

Product Description

It is engineered to provide fundamental performance gains with reduced magnetic sizes and lower bill of materials costs. The device exhibits high electrostatic discharge ruggedness, ensuring reliable operation in demanding environments.

The device features a maximum continuous drain current of 10 Amperes and a maximum drain-source voltage of 700 Volts. Its low maximum drain-source resistance of 450 milliohms contributes to improved efficiency in power conversion systems. The MOSFET is housed in a 3-pin TO-220 package with a through-hole mount, facilitating easy PCB assembly and heat dissipation.

With a maximum power dissipation of 22.7 Watts and operating temperature range from -40°C to 150°C, this MOSFET is suitable for various industrial, household, and commercial electronic applications. The maximum gate-source voltage of 30 Volts supports compatibility with standard gate drive circuits, while the typical gate charge of 13.1 nanoCoulombs enables efficient switching performance. The forward voltage drop of 900 millivolts further enhances power efficiency during conduction.

This product does not comply with automotive standards but excels in applications requiring efficient power switching and robust construction. Its compact dimensions of approximately 16.15 mm width, 4.85 mm height, and 10.68 mm length make it suitable for integration into space-constrained electronic designs.

The 700V CoolMOS P7 series addresses low power SMPS markets with improved efficiency. Supports smaller magnetic components reducing device size and cost. High ESD ruggedness ensures durable operation in harsh electrical environments.

Through-hole TO-220 package promotes effective heat dissipation and mechanical stability. Operating temperature range from -40°C up to 150°C allows for versatile application environments. Typical gate charge and low Rds(on) contribute to efficient switching performance.

Ideal for industrial, commercial power electronics, telecommunications, and consumer device power supply designs. Browse more semiconductor solutions at EnvMart for high reliability and performance components.

Infineon 700V CoolMOS P7 N-Channel MOSFET, 10 A, 700 V, 3-Pin TO-220 IPAN70R450P7SXKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 Amperes.

It has a maximum drain-source voltage rating of 700 Volts.

This unit can dissipate a maximum power of 22.7 Watts under thermal constraints.

The maximum gate-source voltage rating is 30 Volts, suitable for standard gate drive circuits.

The typical gate charge is 13.1 nanoCoulombs at the specified gate voltage.

The dimensions are approximately 16.15 mm in width, 4.85 mm in height, and 10.68 mm in length.

It features a maximum drain-source resistance of 450 milliohms, which contributes to efficient conduction.

The operating temperature range is from -40°C to 150°C, allowing for reliable thermal performance.

This model uses a 3-pin TO-220 package type, which facilitates easy PCB assembly.

It is suitable for various industrial, commercial power electronics, telecommunications, and consumer device power supply designs.

The forward voltage drop is approximately 900 millivolts, which improves power efficiency during conduction.

This device is an N-channel MOSFET, which is commonly used in low power switched-mode power supply applications.

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