Infineon 500V CoolMOS CE N-Channel MOSFET, 2.2 A, 500 V Enhancement Mode, 3-Pin TO-252 IPD50R2K0CEAUMA1

Infineon IPD50R2K0CEAUMA1 is a 500V CoolMOS CE N-Channel MOSFET designed for power switching applications with a continuous drain current of 2.2 A and an enhancement mode channel. This device is housed in a 3-pin TO-252 surface mount package that offers excellent thermal management and compact footprint suited for industrial and commercial electronics.

Its maximum drain-source voltage of 500V and power dissipation capability of 33W make it an ideal choice for power supply circuits, motor drives, and industrial automation applications.

The device supports an operating temperature range from -55°C to 150°C enabling reliable operation in harsh or outdoor environments. With a low maximum drain-source resistance of 2 ohms and a typical gate charge of 6 nC, this MOSFET ensures efficient switching and low power loss.

Additional technical features include a maximum gate-source voltage rating of 20 V and a forward voltage drop of 830 mV, optimizing power efficiency in circuits. 3-pin TO-252 package for surface mounting and compact design.

2.2 A continuous drain current and 500 V drain-source voltage rating. Enhancement mode operation for controlled conduction. Low Rds(on) of 2 ohms for reduced conduction losses. Wide temperature operating range (-55°C to 150°C) for robustness.

Typical gate charge of 6 nC at Vgs to minimize switching losses. Maximum gate-source voltage of 20 V ensures gate protection. Forward voltage of 830 mV supports efficient power usage. Compact device dimensions for flexible PCB integration.

This Infineon MOSFET is suitable for applications in industrial electronics, power management, motor control, HVAC systems, and renewable energy solutions. Explore more high-quality semiconductor components in the Discrete Semiconductors > MOSFET category on EnvMart for your electronics projects and industrial designs.