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Infineon 600V CoolMOS P7 N-Channel MOSFET, 18 A, 600 V, Enhancement Mode, 3-Pin TO-252 IPD60R180P7ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.35mm
Length 6.65mm
Model IPD60R180P7ATMA1
Width 6.42mm
Mount Type Surface
Series 600V CoolMOS P7
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 18A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 180mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 72W
Typical Gate Charge Qg @ Vgs 25nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Maximum continuous drain current of 18 A ensures robust current handling capability.
  • Rated for a maximum drain-source voltage of 600 V suitable for high-voltage switching.
  • Features an enhancement mode N-channel configuration for efficient power switching.
  • Has low maximum drain-source resistance of 180 mΩ to minimize conduction losses.
  • Supports a maximum power dissipation of 72 W for reliable operation under load.
  • Typical gate charge of 25 nC allows for rapid switching performance.
  • Designed with a maximum gate-source voltage rating of 20 V to protect the gate.
  • Forward voltage drop of 900 mV with an integrated rugged body diode.

Product Description

Infineon IPD60R180P7ATMA1 is a 600V CoolMOS P7 N-Channel MOSFET designed for high efficiency power switching applications in industrial, automotive, and power management sectors. The device's enhancement-mode channel type supports 18 A continuous drain current and is packaged in a compact 3-pin TO-252 surface mount configuration, facilitating easy PCB layout and reliable thermal management.

This MOSFET features a rugged body diode and integrated gate resistor to reduce oscillation sensitivity during switching transitions, enhancing robustness and EMI performance. Its low on-resistance (Rds(on)) of 180 milliohms minimizes conduction losses, thereby improving overall energy efficiency in converters and motor drives.

The typical gate charge (Qg) of 25 nC promotes fast switching speeds, making it suitable for high-frequency applications. It supports a maximum drain-source voltage of 600 V with a gate-source voltage tolerance up to 20 V, ensuring robustness under voltage stress conditions. The maximum power dissipation rating of 72 W allows sustained operation under demanding thermal loads.

Operating temperature ranges from -55°C to 150°C make this MOSFET viable for harsh industrial, automotive, and power supply environments. The dimensions (6.65 mm length, 6.42 mm width, and 2.35 mm height) ensure compact integration in modern electronic designs.

Maximum continuous drain current of 18 A enhances device capability in power circuits. 600V maximum drain-source voltage rating supports high-voltage applications. Low Rds(on) of 180 mΩ to improve efficiency and reduce losses.

Typical gate charge of 25 nC for superior switching performance. Integrated rugged body diode and gate resistor for improved reliability. Wide operating temperature range from -55°C to 150°C for harsh conditions. Compact 3-pin TO-252 surface mount package for ease of PCB assembly.

This Infineon CoolMOS P7 MOSFET is well-suited for industrial power supplies, motor control, renewable energy inverters, and automotive electronics. Its advanced super junction technology balances efficiency with ease of use, enabling designers to achieve optimized power management solutions.

Explore the Electronics & Electricals category on EnvMart for more high-quality MOSFETs and power semiconductors from Infineon and other leading manufacturers.

Infineon 600V CoolMOS P7 N-Channel MOSFET, 18 A, 600 V, Enhancement Mode, 3-Pin TO-252 IPD60R180P7ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 18 A, ensuring robust current handling capability.

It is rated for a maximum drain-source voltage of 600 V, making it suitable for high-voltage applications.

This unit features a low maximum drain-source resistance of 180 mΩ, which helps minimize conduction losses.

The typical gate charge is 25 nC, allowing for rapid switching performance.

The dimensions of the TO-252 package are 6.65 mm in length, 6.42 mm in width, and 2.35 mm in height.

The maximum power dissipation rating for this MOSFET is 72 W, allowing for reliable operation under load.

The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.

It has an enhancement mode N-channel configuration, which is efficient for power switching applications.

The maximum gate-source voltage rating is 20 V, which protects the gate during operation.

This model is well-suited for industrial power supplies, motor control, renewable energy inverters, and automotive electronics.

The forward voltage drop of the integrated body diode is 900 mV.

This MOSFET is designed for surface mounting, facilitating easy PCB layout and thermal management.

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