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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.35mm |
| Length | 6.65mm |
| Model | IPD60R180P7ATMA1 |
| Width | 6.42mm |
| Mount Type | Surface |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 72W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPD60R180P7ATMA1 is a 600V CoolMOS P7 N-Channel MOSFET designed for high efficiency power switching applications in industrial, automotive, and power management sectors. The device's enhancement-mode channel type supports 18 A continuous drain current and is packaged in a compact 3-pin TO-252 surface mount configuration, facilitating easy PCB layout and reliable thermal management.
This MOSFET features a rugged body diode and integrated gate resistor to reduce oscillation sensitivity during switching transitions, enhancing robustness and EMI performance. Its low on-resistance (Rds(on)) of 180 milliohms minimizes conduction losses, thereby improving overall energy efficiency in converters and motor drives.
The typical gate charge (Qg) of 25 nC promotes fast switching speeds, making it suitable for high-frequency applications. It supports a maximum drain-source voltage of 600 V with a gate-source voltage tolerance up to 20 V, ensuring robustness under voltage stress conditions. The maximum power dissipation rating of 72 W allows sustained operation under demanding thermal loads.
Operating temperature ranges from -55°C to 150°C make this MOSFET viable for harsh industrial, automotive, and power supply environments. The dimensions (6.65 mm length, 6.42 mm width, and 2.35 mm height) ensure compact integration in modern electronic designs.
Maximum continuous drain current of 18 A enhances device capability in power circuits. 600V maximum drain-source voltage rating supports high-voltage applications. Low Rds(on) of 180 mΩ to improve efficiency and reduce losses.
Typical gate charge of 25 nC for superior switching performance. Integrated rugged body diode and gate resistor for improved reliability. Wide operating temperature range from -55°C to 150°C for harsh conditions. Compact 3-pin TO-252 surface mount package for ease of PCB assembly.
This Infineon CoolMOS P7 MOSFET is well-suited for industrial power supplies, motor control, renewable energy inverters, and automotive electronics. Its advanced super junction technology balances efficiency with ease of use, enabling designers to achieve optimized power management solutions.
Explore the Electronics & Electricals category on EnvMart for more high-quality MOSFETs and power semiconductors from Infineon and other leading manufacturers.
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