Infineon OptiMOS 3 N-Channel MOSFET 70 A 40 V 3-Pin TO-220 IPA041N04NGXKSA1

Infineon IPA041N04NGXKSA1 is a high-performance N-Channel MOSFET from the OptiMOS 3 series, designed to deliver superior power efficiency in demanding electronic applications. Rated for a continuous drain current of 70 A and a maximum drain-source voltage of 40 V, it excels in through-hole mounting configurations using the TO-220 3-pin package. The device features industry-leading low RDS(on) resistance, achieved through advanced thin wafer technology, resulting in reduced conduction losses and enhanced switching speeds.

This MOSFET supports fast switching applications with its optimal switching behavior, ensuring minimal energy loss and improved circuit efficiency. It can dissipate up to 35 W of power, allowing robust operation at elevated temperatures up to 175°C. Its typical gate charge of 42 nC reduces switching losses further, while the maximum gate-source voltage rating of 20 V provides flexibility in circuit design.

The device's compact size (10.68 mm length, 16.15 mm width, and 4.85 mm height) makes it suitable for dense PCB layouts. Compliant with halogen-free regulations IEC61249-2-21, it meets environmental standards for modern electronics manufacturing.

Industry-leading low RDS(on) for high efficiency. Advanced thin wafer technology for superior performance. Through-hole TO-220 package with 3 pins. Electrical ratings: 70 A continuous current, 40 V Vds, 35 W power dissipation.

Wide operating temperature range: -55°C to 175°C. Typical gate charge of 42 nC for fast switching. Maximum gate-source voltage: 20 V. Compliant with halogen-free IEC standards. Compact dimensions fitting various industrial applications.

This MOSFET is ideal for use in power management, automotive electronics, industrial controls, and other applications where efficient switching and conduction are critical. Explore more Infineon semiconductor products for your design and industrial needs on EnvMart.

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