Infineon OptiMOS 5 N-Channel MOSFET, 87 A Continuous Drain Current, 150 V Drain-Source Voltage, 8-Pin BSC093N15NS5ATMA1

Infineon BSC093N15NS5ATMA1 OptiMOS 5 Series N-Channel MOSFET combines high current density and voltage handling in a compact 8-pin SuperSO surface mount package. Rated for a continuous drain current of 87 A and a maximum drain-source voltage of 150 V, this component is engineered for demanding power switching and conversion tasks in industrial and commercial electronics.

The device features a low on-resistance of 9.3 mΩ which minimizes conduction losses, contributing to improved efficiency in power circuits. With a typical gate charge of 10 nC, it supports fast switching transitions ideal for high-frequency applications such as DC-DC converters and switch-mode power supplies.

Its maximum power dissipation capability of 139 W enables robust thermal performance under load, provided proper heatsinking and PCB thermal design are in place. The MOSFET's operating temperature range spans from -55°C to 150°C junction temperature, making it suitable for various environmental conditions encountered in automotive, industrial, and power management applications.

Supplied in a SuperSO surface mount package, this MOSFET is compatible with standard automated assembly processes including pick-and-place and reflow soldering, facilitating efficient manufacturing integration.

Applications include DC-DC converter switching stages, high-current power distribution modules, synchronous rectification in power converters, and use within switch-mode power supplies. Its gate-to-source voltage tolerance of ±20 V requires gate drive voltages to remain within these limits to avoid damage.

This MOSFET supports high current handling with a maximum continuous drain current of 87 A. A maximum drain-source voltage rating of 150 V ensures suitability for high-voltage applications. Low maximum drain-source resistance of 9.3 mΩ reduces conduction losses for increased efficiency.

Typical gate charge of 10 nC enables fast switching transitions for power conversion efficiency. Maximum power dissipation rating of 139 W allows effective thermal management under heavy loads. Wide operating temperature range from -55°C up to 150°C junction temperature supports varied environments.

Designed for surface mounting in compact assemblies using standard pick-and-place and reflow processes. Ideal for applications including DC-DC converter switching, high-current power distribution, and synchronous rectification in industrial power supplies.

Forward voltage of 1.2 V and maximum gate-source voltage tolerance of ±20 V ensure reliable gate driving within specifications. Explore related Infineon MOSFET products and other discrete semiconductors on EnvMart for your electronic component sourcing needs.

Explore more products in our MOSFETs category.