Infineon HEXFET N-Channel Enhancement MOSFET, 104 A Continuous Drain Current, 150 V Max Drain Source Voltage IRFB4115PBF

Infineon IRFB4115PBF is a HEXFET N-Channel enhancement MOSFET designed for demanding power switching and conversion applications. It features a robust through-hole TO-220 3-pin package which facilitates straightforward heatsink attachment and reliable assembly in electronic circuits.

This device supports a maximum continuous drain current of 104 A and a maximum drain source voltage of 150 V, enabling it to handle heavy loads and high voltage switching effectively. The low on-resistance of 11 mΩ helps reduce conduction losses, improving overall efficiency in power management systems.

The typical gate charge of 77 nanocoulombs ensures fast switching transitions, which is critical in high-frequency applications such as switch-mode power supplies and motor control drives. Infineon IRFB4115PBF has a maximum power dissipation rating of 380 W, allowing sustained operation under significant thermal stress.

Its wide operating temperature range from -55°C to 175°C makes it suitable for industrial, automotive, HVAC, and manufacturing environments. The maximum gate-to-source voltage rating is ±20 V, ensuring protection against gate damage by enforcing suitable drive circuit parameters.

This MOSFET is ideal for applications requiring efficient high-current handling such as Infineon HEXFET 150 V MOSFET motor drivers, switch-mode power supplies, and high-power N-channel enhancement MOSFET circuits. The TO-220 package offers convenience in through-hole mounting alongside excellent thermal management.

High continuous drain current up to 104 A ensures heavy load capability. 150 V maximum drain source voltage supports high-voltage circuits. Low RDS(on) of 11 mΩ reduces power loss in conduction. Robust TO-220 through-hole package for heatsinking.

Wide temperature operation from -55°C to 175°C accommodates harsh environments. Typical gate charge of 77 nC enables rapid switching. Maximum power dissipation of 380 W sustains heavy thermal loads. Forward voltage drop of 1.3 V optimizes diode conduction.

Designed for use in industrial, automotive, HVAC, renewable energy, and manufacturing applications. Explore more Infineon power semiconductor products on EnvMart for your industrial and professional electronic component needs.

Explore more products in our Power MOSFET category.