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onsemi Switching Diode Single Silicon Junction 200mA 100V 425mW SOD-123 MMSD914T1G

Category Switching Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.12mm
Length 2.69mm
Model MMSD914T1G
Width 1.6mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Power Dissipation Pd 425mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V
Nexperia Silicon Junction, Single, 215 mA, 2-Pin 100 V SOD-123Brand Nexperia

Key Features

  • Maximum forward current of 200 mA ensures reliable low power switching.
  • Silicon junction construction provides robustness in electrical switching applications.
  • Surface mount SOD-123 package offers compact 2-pin footprint.
  • Maximum peak reverse repetitive voltage of 100 V suits moderate voltage circuits.
  • Power dissipation rated at 425 mW enables efficient heat handling in compact devices.
  • Fast peak reverse recovery time of 4 ns minimizes switching losses.
  • Operational temperature range from -55°C to 150°C supports harsh environments.
  • Maximum forward voltage drop of 1 V reduces power consumption during conduction.

Product Description

onsemi MMSD914T1G switching diode is a reliable, single silicon junction diode designed for switching applications. It operates with a maximum forward current of 200 mA and withstands voltages up to 100 V. The diode features a low forward voltage drop of 1 V, enabling efficient performance in electronic circuits.

Its SOD-123 surface mount package with compact 2-pin configuration measures 2.69 mm in length, 1.6 mm in width, and 1.12 mm in height, making it suitable for space-constrained PCB layouts. The diode offers a power dissipation rating of 425 mW, which is adequate for low power industrial, automotive, and consumer electronic applications.

The fast peak reverse recovery time of 4 ns enhances switching speed and reduces switching losses. Additionally, it supports a wide operating temperature range from -55°C to 150°C, making it dependable under extreme environmental conditions.

Its robustness includes a peak non-repetitive forward surge current rating of 2 A, allowing it to tolerate temporary current surges safely. The diode does not have automotive certifications but is a small signal diode ideal for industrial and commercial electronics.

Maximum forward current of 200 mA ensures reliable low power switching. Silicon junction construction provides robustness in electrical switching applications. Surface mount SOD-123 package offers compact 2-pin footprint.

Maximum peak reverse repetitive voltage of 100 V suits moderate voltage circuits. Power dissipation rated at 425 mW enables efficient heat handling in compact devices. Fast peak reverse recovery time of 4 ns minimizes switching losses.

Operational temperature range from -55°C to 150°C supports harsh environments. Maximum forward voltage drop of 1 V reduces power consumption during conduction. Peak non-repetitive forward surge current of 2 A handles occasional current spikes.

Compact physical dimensions of 2.69 mm x 1.6 mm x 1.12 mm enhance PCB design flexibility.

This switching diode is widely used in electronic circuits for switching, protection, and signal control in industrial, telecommunications, consumer electronics, and automotive applications.

EnvMart offers a vast range of Switching Diodes and semiconductor components for electronics design and manufacturing, including high-quality parts from onsemi.

onsemi Switching Diode Single Silicon Junction 200mA 100V 425mW SOD-123 MMSD914T1G
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Frequently Asked Questions

The maximum forward current for the MMSD914T1G is 200 mA, ensuring reliable low power switching in applications.

This model has a maximum peak reverse repetitive voltage rating of 100 V, making it suitable for moderate voltage circuits.

The power dissipation rating is 425 mW, allowing for efficient heat handling in compact devices.

The SOD-123 package measures 2.69 mm in length, 1.6 mm in width, and 1.12 mm in height.

The operational temperature range for the MMSD914T1G is from -55°C to 150°C, supporting use in harsh environments.

The diode can handle a peak non-repetitive forward surge current of 2 A, allowing it to tolerate temporary current surges safely.

The maximum forward voltage drop is 1 V, which helps reduce power consumption during conduction.

The peak reverse recovery time is 4 ns, which minimizes switching losses and enhances switching speed.

This model features a 2-pin configuration, suitable for surface mount applications.

It features a silicon junction construction, providing robustness in electrical switching applications.

The MMSD914T1G is widely used in electronic circuits for switching, protection, and signal control in industrial, telecommunications, consumer electronics, and automotive applications.

The mount type for this diode is surface mount, specifically in a SOD-123 package.

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