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| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 0.55mm |
| Length | 1.2mm |
| Model | DF5A5.6CJE(TE85L,F |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | DF5A5.6CJE |
| Maximum Operating Temperature | 150°C |
| Package Type | ESV |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Number of Elements per Chip | 4 |
| Diode Configuration | Common Anode |
| Peak Pulse Power Dissipation Pppm | 100mW |
| Test Current It | 5mA |
| Maximum Reverse Leakage Current | 1μA |
Toshiba DF5A5.6CJE(TE85L,F is a 4-element ESD Protection Diode designed to safeguard sensitive electronic circuits against electrostatic discharge damage. Featuring a peak pulse power dissipation of 100 mW, this diode effectively absorbs transient voltage spikes to protect downstream components.
This diode has a common anode configuration combined with 4 elements per chip arranged within a compact 5-pin ESV surface mount package. Toshiba's robust design supports a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics applications.
The device dimensions are 1.2 mm in length, 1.6 mm in width, and 0.55 mm in height, allowing efficient PCB layout optimization. It exhibits low maximum reverse leakage current of 1 μA and a test current rating of 5 mA, which helps minimize power loss and heat generation.
Manufactured in Japan, this ESD diode conforms to industry expectations for semiconductor diode reliability despite having no formal approvals listed. The surface mount ESV package ensures ease of assembly in high-volume manufacturing.
Industrial applications include surge protection for integrated circuits, telecommunications equipment, and automotive electronics where ESD susceptibility must be minimized. This diode offers dependable protection against ESD events to extend product lifespan and maintain performance.
The diode features a common anode configuration ensuring effective ESD suppression. It operates within a wide temperature range from -55°C to 150°C suitable for harsh environments. Compact dimensions of 1.2 mm length, 1.6 mm width, and 0.55 mm height facilitate PCB space-saving designs.
The device includes 4 elements per chip, enabling multiple protection points in a single package. It supports a test current rating of 5 mA and a maximum reverse leakage current of 1 μA for minimal energy loss. The diode is surface mount type with an ESV package ensuring high reliability in electronic assemblies.
Manufactured in Japan to high-quality standards, it is ideal for protecting sensitive semiconductor components. Explore EnvMart's extensive selection of semiconductor protection diodes for enhanced design robustness and compliance.
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