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Infineon HEXFET N-Channel MOSFET, 93 A, 250 V Enhancement Mode, 3-Pin TO-247 IRFP4768PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4768PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 93A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 14.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 520W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The MOSFET uses an enhancement mode channel with an N-type channel for high-speed switching.
- It comes in a 3-pin TO-247 package supporting through-hole mounting.
- Features a low maximum drain-source resistance of 14.5 milliohms to reduce conduction losses.
- Maximum power dissipation rating is 520 W enabling robust performance under load.
- Operating temperature range from -55°C up to 175°C allows for use in demanding industrial environments.
- Typical gate charge of 180 nC and gate-source voltage rating of -20 to +20 V ensure efficient gate control.
- Compact dimensions with length 15.87 mm, width 5.31 mm, and height 20.7 mm support space-saving designs.
Product Description
Infineon IRFP4768PBF is a high-performance HEXFET N-Channel MOSFET designed for motor control and AC-DC synchronous rectification applications. With a maximum continuous drain current of 93 A and a drain-source voltage rating of 250 V, this enhancement mode MOSFET provides excellent efficiency and power density in electronic circuits.
The device is packaged in a robust 3-pin TO-247 through-hole mounting package, ideal for industrial and commercial electrical components. Its low on-resistance of 14.5 milliohms minimizes conduction losses, making it suitable for power conversion and motor driver circuits requiring high current handling capabilities.
The IRFP4768PBF operates reliably over a wide temperature range from -55°C to 175°C, enabling its use in automotive, industrial, and commercial environments. It features a typical gate charge of 180 nC at Vgs and supports gate-source voltage swings from -20 V to +20 V for precise switching control.
Compact size with length 15.87 mm, width 5.31 mm, and height 20.7 mm allows efficient PCB layout and heat dissipation. The maximum power dissipation of 520 W ensures sustained performance in demanding applications.
The MOSFET employs an N-type enhancement channel for high-speed switching. 3-pin TO-247 package facilitates easy mounting and cooling. Low on-resistance enhances efficiency in motor control circuits. Wide temperature range supports automotive and industrial use cases.
High power dissipation rating allows robust operation. Compact footprint is suitable for space-constrained designs. Typical gate charge ensures quick switching times.
This Infineon MOSFET is commonly used in industrial motor controllers, automotive electronic systems, power supplies, and synchronous rectification applications. Its rugged design and electrical characteristics provide reliable performance ensuring energy-efficient and compact power electronics designs.
Explore more MOSFETs and power semiconductor devices in the Infineon portfolio on EnvMart to find suitable solutions for your electronic design projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 93 A.
The maximum drain-source voltage rating is 250 V.
It comes in a 3-pin TO-247 package, which supports through-hole mounting.
The operating temperature range is from -55°C to 175°C.
The maximum power dissipation rating is 520 W.
The typical gate charge is 180 nC.
The maximum gate-source voltage rating is -20 to +20 V.
The dimensions are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.
The maximum drain-source resistance is 14.5 milliohms.
This MOSFET is commonly used in industrial motor controllers, automotive electronic systems, and power supplies.
It uses an N-type enhancement mode channel for high-speed switching.
The forward voltage is 1.3 V.
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