Vishay N-Channel MOSFET 81.2 A 40 V Enhancement Mode Surface Mount SO-8 Package SiRA74DP-T1-GE3

Vishay SiRA74DP-T1-GE3 is a high-performance N-Channel MOSFET designed for power management in electronic circuits. It supports a maximum continuous drain current of 81.2 A and a maximum drain-source voltage of 40 V. The device operates in enhancement mode and is housed in a compact SO-8 surface mount package featuring 8 pins, providing ease of integration with printed circuit boards in industrial and commercial applications.

This MOSFET incorporates TrenchFET Gen IV technology, delivering low drain-source resistance of 3.5 milliohms to reduce conduction losses and enhance efficiency. With a maximum power dissipation of 46.2 watts and an operating temperature range from -55°C to +150°C, it is suitable for high-stress conditions encountered in power supply units, motor controllers, and battery management systems.

The device has a typical gate charge of 27 nC at the gate-source voltage, ensuring low switching losses and improved overall performance. Its maximum gate-source voltage of 20 V safeguards the gate electrode from voltage spikes. The flexible leads increase mechanical reliability by accommodating board flex during soldering and operation, and the MOSFET is optimized for wave soldering processes to facilitate manufacturing.

This product is ideal for applications in industrial automation, power electronics, automotive electronics, and other electronic systems requiring reliable and efficient power switching components. Vishay's SiRA74DP-T1-GE3 provides a robust solution for engineers seeking dependable MOSFET performance in a small footprint package.

This MOSFET features an enhancement mode channel for optimal switching control. Encapsulated in a compact SO-8 surface mount package with 8 pins for easy PCB integration. Maximum drain-source resistance of 3.5 milliohms minimizes conduction losses.

High power dissipation capability of 46.2 W supports robust operation. Operates reliably from -55°C up to 150°C, suitable for demanding thermal environments. Typical gate charge of 27 nC at standard gate voltage reduces switching losses.

Maximum gate-source voltage rating of 20 V ensures gate protection. Designed with TrenchFET Gen IV technology to optimize performance and reliability. Flexible leads provide increased resilience to board flexing during assembly and use.

Optimized for wave soldering for streamlined manufacturing processes. Explore a wide range of Vishay MOSFETs and discrete Semiconductors on EnvMart for your specific industrial and electronic design requirements.