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Infineon HEXFET N-Channel MOSFET 130 A 200 V Enhancement 3-Pin TO-247 IRFP4668PBF
Specifications
| Country of Origin | Mexico |
|---|---|
| Brand | Infineon |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP4668PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 130A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 520W |
| Typical Gate Charge Qg @ Vgs | 161nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- Maximum continuous drain current of 130 A supports heavy-duty electrical loads.
- 200 V maximum drain-source voltage ensures robust voltage handling.
- Low drain-source resistance of 10 milliohms minimizes conduction losses.
- Enhancement mode operation allows efficient switching control.
- Comes in a 3-pin TO-247 package suitable for through-hole mounting.
- Typical gate charge is 161 nC facilitating fast switching speeds.
- Maximum power dissipation rated at 520 W supports high power handling.
- Operating temperature range from -55 to 175 degrees Celsius ensures durability.
Product Description
Infineon IRFP4668PBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor component designed for efficient power management applications. This device delivers a maximum continuous drain current of 130 A and can withstand a maximum drain-source voltage of 200 V, making it ideal for robust power switching tasks.
Featuring an enhancement channel mode and housed in a 3-pin TO-247 through-hole package, the MOSFET offers low on-resistance of 10 milliohms that minimizes conduction losses, improving overall system efficiency. The device supports fast switching with a typical gate charge of 161 nC at Vgs, enabling high-speed operation needed in power conversion systems.
Thermal performance is robust with a maximum power dissipation of 520 W and an operating temperature range from -55°C to 175°C, ensuring reliable operation under demanding industrial conditions. The enhanced body diode further boosts switching performance and ruggedness versus dynamic voltage changes.
Applications include high-speed power switching, uninterruptible power supplies, hard-switched and high-frequency circuits, and broader automation and industrial power systems. The MOSFET is well-suited for synchronous rectification circuits requiring high efficiency and rugged device characteristics.
Maximum continuous drain current of 130 A. Maximum drain-source voltage of 200 V. Minimal on-resistance of 10 milliohms. Enhancement mode channel operation. 3-pin TO-247 package with through-hole mount. Power dissipation rating of 520 W at 25°C.
Operating temperature from -55°C to 175°C. Typical gate charge of 161 nC at gate-source voltage. Enhanced body diode for improved switching performance. Suitable for industrial and power electronics applications.
This Infineon HEXFET MOSFET is a key component for designers and engineers working on power management and industrial electronic systems requiring reliable high current and voltage switching devices. Explore additional Infineon semiconductor components and related electronic parts in the EnvMart catalog for comprehensive solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 130 A, allowing it to support heavy-duty electrical loads.
This MOSFET can withstand a maximum drain-source voltage of 200 V, ensuring robust voltage handling for various applications.
The typical gate charge is 161 nC at gate-source voltage, facilitating fast switching speeds for efficient operation.
It comes in a 3-pin TO-247 package suitable for through-hole mounting, making it easy to integrate into various circuits.
The maximum power dissipation is rated at 520 W at 25°C, supporting high power handling capabilities.
The operating temperature range is from -55°C to 175°C, ensuring durability under demanding conditions.
It features a minimal on-resistance of 10 milliohms, which helps to minimize conduction losses and improve efficiency.
This model is suitable for high-speed power switching, uninterruptible power supplies, and high-frequency circuits, among others.
It is an N-channel MOSFET, which is designed for enhancement mode operation.
The forward voltage is 1.3 V, which is relevant for understanding its performance in various circuits.
The maximum gate-source voltage is -30 V to +30 V, providing flexibility in circuit design.
The dimensions are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
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