Infineon HEXFET N-Channel MOSFET, 36 A Continuous Drain Current, 100 V Drain Source Voltage, Enhancement Mode IRL540NPBF

The Infineon IRL540NPBF is a HEXFET N-Channel MOSFET designed for applications requiring high current capacity and voltage endurance. It can handle a continuous drain current of 36 amperes and sustain a maximum drain-source voltage of 100 volts under enhancement mode operation, making it ideal for efficient power management in industrial, automotive, and renewable energy systems.

This device’s low on-resistance of 44 milliohms reduces conduction losses and heat generation, ensuring efficient switching and energy savings. The MOSFET supports a maximum power dissipation of 140 watts, enabling operation in demanding environments without performance degradation.

The IRL540NPBF operates reliably across a wide temperature range from -55°C to 175°C, suitable for extreme conditions found in automation, robotics, and power supply units. Its TO-220 through-hole package with three pins facilitates easy mounting and integration into printed circuit boards for robust mechanical stability.

The device features a typical gate charge of 74 nanocoulombs, which contributes to fast switching speeds and reduced gate drive losses. It can tolerate gate-source voltages up to ±16 volts, preventing damage from voltage transients. The forward voltage drop of 1.3 volts ensures effective conduction with minimal voltage loss and heat generation.

Applications for this MOSFET include power management in industrial automation systems, electric motor control in robotics, DC-DC converters in renewable energy systems, and other consumer electronics requiring reliable and efficient power switching components.

This MOSFET features enhancement mode for efficient switching performance. Low maximum drain-source resistance (Rds) of 44 milliohms reduces power loss and heat generation. Maximum power dissipation rating of 140 W supports demanding industrial uses.

Operates reliably in a wide temperature range from -55°C to 175°C, suitable for harsh environments. Package type TO-220 with 3 pins enables through-hole mounting for secure installation. Typical gate charge of 74 nC at rated gate voltage optimizes gate drive efficiency.

Maximum gate-source voltage rating of ±16 V protects against voltage spikes. Forward voltage of 1.3 V supports effective conduction with minimal voltage drop. Explore the range of Infineon discrete semiconductor products on EnvMart to find compatible components for your power electronics and control system projects.