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Infineon HEXFET Type P-Channel MOSFET 14 A, 100 V Enhancement Mode 3-Pin TO-220 IRF9530NPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF9530NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| IRF9530NPBF P-Channel MOSFET, 14 A, 100 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- Provides robust maximum continuous drain current of 14 amperes for demanding applications.
- Handles drain-source voltage up to 100 volts ensuring wide usability.
- Low on-resistance of 200 milliohms enhances power efficiency and reduces losses.
- Compact TO-220 package enables effective heat dissipation and easy mounting.
- Operates in enhancement mode ensuring reliable switching operation.
- Wide operating temperature range from -55°C to +175°C suits harsh environments.
- Maximum power dissipation of 79 watts supports substantial load capacity.
- Typical gate charge of 58 nanocoulombs optimizes switching performance.
Product Description
Infineon IRF9530NPBF is a HEXFET Series P-Channel MOSFET designed for efficient power management in electronic and electrical applications. It supports a continuous drain current of 14 amperes and can handle drain-source voltages up to 100 volts. Packaged in the widely used 3-Pin TO-220 format, it offers compatibility with through-hole mounting techniques and facilitates effective heat dissipation.
Operating in enhancement mode, this MOSFET ensures dependable switching performance which is essential in automation, power supply, and motor control systems. Its low on-resistance of 200 milliohms minimizes conduction losses improving overall circuit efficiency. Typical gate charge at 58 nanocoulombs allows rapid switching suitable for high-frequency applications.
The MOSFET maintains performance reliably within an operating temperature range spanning from -55°C to +175°C, making it suitable for use in industrial environments exposed to extreme temperatures. With a maximum power dissipation rating of 79 watts, the device supports substantial load conditions and contributes to the stable operation of power conversion circuits.
Applications include power supply circuits, motor drivers, power converters, and high current driver circuits. The device's robust electrical characteristics and thermal ratings make it an important component for engineers designing durable, efficient power electronic solutions.
Maximum continuous drain current of 14 A for robust electrical performance. Drain-source voltage rating of 100 V supports diverse application needs. Low on-resistance of 200 mΩ enhances power efficiency. TO-220 package allows for easy mounting and heat management.
Enhancement mode operation ensures reliable switch control. Wide operating temperature range of -55°C to 175°C for harsh environments. High maximum power dissipation of 79 W for heavy load capability. Typical gate charge of 58 nC enables efficient switching.
Suited for power supply, motor control, and power conversion applications.
This Infineon MOSFET is a trusted choice for industrial, automation, electronics, and power management sectors. Explore more components and solutions in our Electronics & Electricals categories at EnvMart for your next project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 amperes.
It can handle a maximum drain-source voltage of 100 volts.
The on-resistance is 200 milliohms, which enhances power efficiency.
This model is packaged in a 3-Pin TO-220 format, suitable for through-hole mounting.
It operates within a temperature range of -55°C to +175°C.
The maximum power dissipation rating is 79 watts, supporting substantial load capacity.
The typical gate charge is 58 nanocoulombs, optimizing switching performance.
It features a P-Channel type, operating in enhancement mode.
The height of this MOSFET is 8.77 mm.
The width is 4.69 mm and the length is 10.54 mm.
It is suitable for applications such as power supply circuits, motor drivers, and power converters.
The maximum gate-source voltage is -20V to +20V.
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