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STMicroelectronics Mdmesh M6 N-Channel MOSFET 31A 600V Enhancement 3-Pin TO-220 STL47N60M6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 8.1mm |
| Length | 8.1mm |
| Model | STL47N60M6 |
| Width | 950μm |
| Mount Type | Surface |
| Series | Mdmesh M6 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 52.2nC |
| Maximum Gate Source Voltage Vgs | 25V |
Key Features
- The device features a 3-pin TO-220 package optimized for surface mounting.
- It has a low maximum drain-source resistance of 82 milliohms enabling minimal conduction losses.
- The MOSFET operates with enhancement mode channel and supports gate voltages up to 25 volts.
- It provides excellent switching performance with typical gate charge of 52.2 nanocoulombs at 5 volts gate voltage.
- Designed for operation in wide temperature ranges from -55°C up to 175°C.
- Maximum power dissipation capability of 190 watts.
- 100% avalanche tested and Zener protected for robust reliability.
Product Description
The STMicroelectronics STL47N60M6 is a high-performance N-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) tailored for power switching applications requiring efficient and reliable control of loads up to 31 amperes.
This device is packaged in a compact 3-pin TO-220 form factor, designed for surface mount applications and optimized for thermal and electrical performance.
Featuring a maximum drain-source voltage rating of 600 volts and a very low on-resistance of 82 milliohms, the STL47N60M6 enables minimal conduction losses, which improves overall system efficiency.
Its enhancement mode channel type allows for controlled switching behavior, while a maximum gate-source voltage of 25 volts ensures safe and reliable operation within typical design limits.
The MOSFET dissipates up to 190 watts, providing robust capability for medium-power industrial, automotive, and consumer electronics applications.
With operational temperature tolerances ranging from minus 55 degrees Celsius to 175 degrees Celsius, this component is designed to perform reliably in harsh environments and varied thermal conditions.
The package dimensions support easy integration into power supply circuits, motor controls, and other semiconductor-based switching devices. The MOSFET is 100% avalanche tested and Zener protected to ensure high reliability.
Applications include industrial automation, motor drive controls, power supplies, and energy management systems. Integration into printed circuit boards is simplified by its TO-220 standard package size and pin count. STMicroelectronics offers this product with guaranteed quality and compliance, making it an excellent choice for engineers and designers requiring robust MOSFET performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31A.
The maximum drain-source voltage rating is 600V.
It features a maximum drain-source resistance of 82 milliohms.
The typical gate charge at a gate voltage of 5 volts is 52.2 nanocoulombs.
The operating temperature range is from -55°C to 175°C.
The maximum power dissipation capability is 190 watts.
It is packaged in a 3-pin TO-220 form factor optimized for surface mounting.
The maximum gate-source voltage is 25 volts.
This model features an enhancement mode N-channel type.
It is suitable for applications such as industrial automation, motor drive controls, and power supplies.
The height is 8.1mm and the width is 950μm.
Yes, it is 100% avalanche tested and Zener protected for reliability.
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