STMicroelectronics SiC MOSFET N-Channel 20 A 1.2 kV Enhancement Mode 3-Pin H2PAK-2 SCT20N120H

STMicroelectronics SCT20N120H is a silicon carbide (SiC) power MOSFET designed to deliver high performance with a maximum continuous drain current of 20 A and a drain-source voltage of 1.2 kV. The enhancement mode N-channel transistor is housed in a 3-Pin H2PAK-2 surface mount package, providing compactness and ease of integration in high power circuits.

The SiC material utilized in this MOSFET offers superior thermal conductivity and electrical characteristics compared to silicon, enabling operation up to 175°C junction temperature and improved efficiency. The device exhibits a low on-resistance of 203 mΩ, minimizing conduction losses, and a maximum power dissipation rating of 150 W, allowing it to handle significant power loads in industrial power management and switching applications.

The MOSFET operates with a low typical gate charge of 45 nC at 25 V gate-source voltage, facilitating fast switching and reducing gate drive losses. Its operational temperature range spans from -55°C to 175°C, ensuring reliable performance in harsh and demanding environments such as renewable energy converters, motor drives, power supplies, and automotive electronics.

This product features a 3-pin configuration and a compact physical size with 10.4 mm height, 15.8 mm length, and 4.7 mm width, optimized for surface mount technology assembly. The device does not carry any specific automotive certifications but is suitable for various electronic power management roles requiring robust and efficient semiconductor components.

The STMicroelectronics SCT20N120H continues the trend of leveraging wide bandgap semiconductors to improve power density, efficiency, and thermal management in next-generation electronic systems. It is an ideal solution for engineers designing advanced high power electronics with demands for high voltage blocking, low losses, and thermal robustness.

This SiC MOSFET features an enhancement mode channel design. It has a maximum drain-source resistance of 203 mΩ for efficient conduction. The device supports up to 150 W power dissipation to handle demanding loads. Designed for surface mount applications with a compact 10.4 mm height and 15.8 mm length.

Operates in an extended temperature range from -55°C to 175°C for reliability in harsh environments. Maximum gate-source voltage rating of 25 V ensures robust gate drive margins. Low typical gate charge of 45 nC enables fast switching performance.

Ideal for industrial and power electronics applications requiring wide bandgap material benefits. Explore the STMicroelectronics product range at EnvMart for a broad selection of semiconductor components tailored to industrial, automotive, and power electronics applications.