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Wolfspeed N-Channel Enhancement Mode MOSFET 1700 V 5.3 A 78 W Surface Mount TO-263 7-Pin C2M1000170J
Specifications
| Country of Origin | China |
|---|---|
| Brand | Wolfspeed |
| Height | 4.57mm |
| Length | 10.23mm |
| Model | C2M1000170J |
| Width | 10.99mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 1700V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 78W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -10, +25V |
| Forward Voltage Vf | 3.8V |
Key Features
- The device features low on-resistance of 1.4 Ω for efficient switching performance.
- Designed for surface mount applications with a 7-pin TO-263 package.
- Typical gate charge is 13 nC at specified gate-source voltage for rapid switching.
- Operates reliably within temperature range from -55°C to 150°C.
- Maximum gate-source voltage ranges between -10 V and +25 V ensuring stable operation.
- Forward voltage drop is 3.8 V enhancing power efficiency in circuits.
- Robust construction supports high voltage and fast switching for power conversion and industrial applications.
- Product is manufactured in China and complies with no specific automotive or industry certifications.
Product Description
Wolfspeed C2M1000170J is a silicon carbide N-Channel Enhancement Mode MOSFET designed for high voltage, high efficiency power switching applications.
This device delivers a maximum continuous drain current of 5.3 A and withstands drain-source voltage up to 1700 V, making it suitable for demanding power conversion, industrial motor drives, and electronic power systems.
The 7-pin TO-263 surface mount package allows easy integration into PCB designs with improved thermal management. The MOSFET features a low on-resistance of 1.4 Ω, enabling high-speed switching with reduced conduction losses.
The gate charge of 13 nC at specified gate voltages ensures enhanced switching efficiency and low gate drive power requirements. It operates reliably within a wide temperature range from -55°C to 150°C, suitable for harsh industrial environments.
The device’s maximum gate-source voltage of -10 V to +25 V provides stable operation without risking gate damage. The forward voltage drop of 3.8 V also aids in system efficiency by minimizing power loss during conduction.
This Wolfspeed MOSFET exhibits latch-up resistance and ease of paralleling multiple devices, addressing high current requirements in power electronics. Though there are no specific automotive certifications, its robust design fits well in industrial, laboratory, manufacturing, and HVAC power modules.
The device features low on-resistance of 1.4 Ω for efficient switching performance. Designed for surface mount applications with a 7-pin TO-263 package. Typical gate charge is 13 nC at specified gate-source voltage for rapid switching.
Operates reliably within temperature range from -55°C to 150°C. Maximum gate-source voltage ranges between -10 V and +25 V ensuring stable operation. Forward voltage drop is 3.8 V enhancing power efficiency in circuits. Robust construction supports high voltage and fast switching for power conversion and industrial applications.
Product is manufactured in China and complies with no specific automotive or industry certifications. Explore Wolfspeed semiconductor devices and related high-performance MOSFETs for advanced power and electronic components on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.3 A.
It can withstand a maximum drain-source voltage of 1700 V.
The on-resistance is 1.4 Ω, which contributes to its efficient switching performance.
The typical gate charge is 13 nC at the specified gate-source voltage.
It operates reliably within a temperature range from -55°C to 150°C.
The forward voltage drop is 3.8 V, which helps enhance power efficiency in circuits.
This model is packaged in a TO-263 surface mount configuration with 7 pins.
The maximum gate-source voltage ranges between -10 V and +25 V.
The maximum power dissipation for this model is 78 W.
This device features an N-channel type configuration.
This device is manufactured in China.
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