Infineon HEXFET N-Channel MOSFET 60 A, 55 V Enhancement Mode, 3-Pin TO-252 IRLR2905ZTRPBF

Infineon IRLR2905ZTRPBF HEXFET N-Channel MOSFET is a surface-mount power transistor designed to meet demanding industrial and electronic applications requiring efficient switching and low conduction losses. Featuring a 60 A maximum continuous drain current and 55 V maximum drain-source voltage, it suits a diverse range of power management tasks.

Part of Infineon’s HEXFET series, this MOSFET offers enhanced performance with a low typical on-resistance of 13.5 milliohms, enabling higher efficiency in power conversion and load driving. The device is packaged in a TO-252 3-pin format for reliable mechanical and thermal connections on printed circuit boards.

The MOSFET supports a wide operating temperature range from -55°C to 175°C, allowing stable operation in harsh industrial, automotive, and commercial environments. It features a maximum power dissipation capability of 110 watts, suitable for applications such as power supplies, motor drives, and load switching circuits.

The device’s maximum gate-source voltage rating of -16 V to +16 V and typical gate charge of 23 nC allow for robust gate control and fast switching speed, optimizing overall circuit performance and thermal management.

Key physical dimensions include a length of 6.73 mm, width of 7.49 mm, and height of 2.39 mm, making it compact and compatible with standard surface-mount assembly processes.

Typical applications include power management in industrial automation, consumer electronics, automotive electronics, and power control systems where reliable and efficient switching is critical.

Capable of handling a maximum continuous drain current of 60 amperes for heavy-duty applications. Maximum drain-source voltage rating of 55 volts ensures stability under high voltage conditions. Low drain-source resistance of 13.5 milliohms minimizes conduction losses and improves efficiency.

Designed with a HEXFET series enhancing overall device reliability and performance. Compact 3-pin TO-252 surface mount package simplifies board layout and thermal management. Operating temperature range from -55°C to 175°C suitable for demanding industrial environments.

Maximum power dissipation rating of 110 watts supports high-power applications. Typical gate charge of 23 nanocoulombs optimizes switching speed. Maximum gate-source voltage tolerance of -16 V to +16 V protects against surges.

Physical dimensions approximately 6.73 mm length, 7.49 mm width, and 2.39 mm height. Discover further solutions and similar MOSFETs in the Infineon range available at EnvMart for your industrial and electronic component sourcing needs.