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Infineon HEXFET N-Channel MOSFET, 24 A Continuous Drain Current, 200 V Maximum Drain Source Voltage, 3-Pin IRFR4620TRLPBF

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Infineon HEXFET N-Channel MOSFET, 24 A Continuous Drain Current, 200 V Maximum Drain Source Voltage, 3-Pin IRFR4620TRLPBF

Name: Infineon HEXFET N-Channel MOSFET, 24 A Continuous Drain Current, 200 V Maximum Drain Source Voltage, 3-Pin IRFR4620TRLPBF
Brand: Infineon
SKU: 274116
Price: 1.48 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.39mm
Length	6.73mm
Model	IRFR4620TRLPBF
Width	7.49mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	24A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	78mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	144W
Typical Gate Charge Qg @ Vgs	25nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

This MOSFET delivers low conduction losses with a typical Rds(on) of 78 milliohms.
It features a maximum power dissipation of 144W suitable for demanding thermal environments.
The typical gate charge of 25nC enables fast gate switching performance.
Operates reliably across a temperature range from -55°C to 175°C.
Designed for surface mount applications with compact dimensions of 6.73mm length and 7.49mm width.
Supports enhancement-mode channel operation with a maximum gate-source voltage rating of ±20V.
Ideal for high-voltage DC-DC converters, motor drive switching, and battery management circuits.

Product Description

Infineon IRFR4620TRLPBF HEXFET N-Channel MOSFET is a high-performance surface-mount transistor designed for switching and power conversion in electronic systems. It supports a maximum continuous drain current of 24A and can sustain a drain-source voltage up to 200V, making it ideal for robust and reliable operation in demanding electrical environments.

This device features a low on-resistance of 78mΩ to minimize conduction losses and a typical gate charge of 25nC, allowing for rapid switching and high efficiency. The MOSFET can dissipate up to 144W, supporting powerful thermal management strategies such as PCB copper areas or heat sinking to maintain junction temperatures within safe limits.

With a wide operating temperature range from -55°C to 175°C, the IRFR4620TRLPBF is suited for applications requiring high thermal endurance. Its 3-pin TO-252 package facilitates surface mounting with compact dimensions (6.73mm length, 7.49mm width, and 2.39mm height), contributing to space-saving layouts in industrial and commercial electronics.

Typical use cases include high-voltage DC-DC converters in power supplies, industrial motor drive switching stages, and battery management systems requiring robust 200V tolerance. The device's enhancement-mode channel operation and ±20V gate-source voltage ratings ensure safe operation and longevity.

Low Rds(on) of 78 milliohms reduces conduction losses. Maximum power dissipation of 144W supports high load applications. Typical gate charge 25nC for efficient switching. Wide temperature operation from -55°C to 175°C. Compact TO-252 surface mount package.

Supports high current operation up to 24A continuous drain current. Enhanced reliability for industrial and power management electronics.

Infineon’s HEXFET series MOSFETs combine high voltage, current handling, and thermal performance for demanding industrial, laboratory, and power electronics applications. Browse more MOSFET devices and semiconductor components on EnvMart for your project needs.