$2.27
$2.20
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel MOSFET, 106 A, 75 V Enhancement, 3-Pin TO-263 IRF3808STRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF3808STRLPBF |
| Width | 11.3mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 106A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 7.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| Infineon HEXFET N-Channel MOSFET, 106 A, 75 V, 3-Pin D2PAK IRF3808SPBFBrand | Infineon |
Key Features
- Designed with a TO-263 package and 3-pins for surface mounting.
- Offers a low maximum drain-source resistance of 7.5 milliohms.
- Provides a maximum power dissipation of 200 watts for robust thermal performance.
- Operates over a temperature range of -55°C minimum to 175°C maximum.
- Features an enhancement mode channel and a typical gate charge of 150 nC at Vgs.
- Maximum gate-source voltage is ±20 V ensuring protection against gate overstress.
- Physical dimensions include length 10.67 mm, width 11.3 mm, and height 4.83 mm.
- Forward voltage is typically 1.3 V allowing efficient conduction.
Product Description
Infineon IRF3808STRLPBF is an advanced HEXFET® N-Channel MOSFET designed for high-efficiency power switching applications. Featuring a continuous drain current of 106 A and a maximum drain-source voltage of 75 V, this device delivers robust performance with low conduction losses.
Housed in a compact TO-263 surface mount package with 3 pins, it incorporates a low maximum on-resistance of 7.5 milliohms and a maximum power dissipation rating of 200 watts, making it suitable for heavy duty power conversion designs.
The MOSFET supports an enhancement mode channel, with a typical gate charge of 150 nC at the gate-source voltage threshold, ensuring rapid switching capabilities. The maximum allowable gate-source voltage swings between -20 V and +20 V help safeguard the device against potential gate damage.
Operating comfortably over a wide temperature range from -55°C up to 175°C, the IRF3808STRLPBF suits diverse industrial, consumer electronics, and power management use cases. Its physical package dimensions are length 10.67 mm, width 11.3 mm, and height 4.83 mm, providing ease of integration into compact PCB layouts.
Though not qualified to automotive standards, this MOSFET is ideal for applications requiring reliable switching, power amplification, and efficient energy conversion in sectors such as industrial automation, HVAC systems, laboratory instrumentation, and manufacturing equipment.
TO-263 package, 3-pin surface mount design. Maximum continuous drain current: 106 A for high load handling. Low on-resistance of 7.5 mΩ reduces conduction losses. High power dissipation rating of 200 W for thermal robustness.
Wide operating temperature range from -55°C to 175°C. Enhancement mode channel with fast switching gate charge. Maximum gate-source voltage ±20 V for gate protection. Typical forward voltage of 1.3 V supports efficient conduction.
Physical dimensions compatible with optimized PCB design. Designed for industrial, power management, and electronic applications. Explore more Infineon MOSFETs and power device solutions in the Electronics & Electricals section at EnvMart for your industrial and electronic design needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of the IRF3808STRLPBF is 106 A.
The maximum drain-source voltage for the IRF3808STRLPBF is 75 V.
It features a low maximum drain-source resistance of 7.5 milliohms.
The maximum power dissipation rating is 200 watts.
The dimensions of the TO-263 package are 10.67 mm in length, 11.3 mm in width, and 4.83 mm in height.
The typical gate charge at Vgs is 150 nC.
It operates over a temperature range of -55°C to 175°C.
This model features an enhancement mode channel.
The maximum gate-source voltage is ±20 V.
It is suitable for applications in industrial automation, HVAC systems, laboratory instrumentation, and manufacturing equipment.
The TO-263 package has 3 pins.
The country of origin for this MOSFET is India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
$2.27
$2.20
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent