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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRLU024NPBF |
| Width | 2.39mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBFBrand | Infineon |
Infineon IRLU024NPBF is a HEXFET N-Channel MOSFET designed for demanding electrical and electronic applications requiring high current capability and voltage handling. With a maximum continuous drain current of 17 amperes and a maximum drain-source voltage rating of 55 volts, this enhancement mode MOSFET operates within a stable and wide temperature range from -55°C up to 175°C.
This device uses a 3-pin IPAK through-hole package, allowing easy mounting on printed circuit boards and providing mechanical robustness. Featuring a maximum power dissipation of 45 watts, it supports efficient power management in industrial and consumer electronics circuits.
The low drain-source on-resistance (Rds(on)) of 65 milliohms reduces conduction losses and heat generation, improving overall efficiency. Its typical gate charge of 15 nanocoulombs contributes to faster switching speeds, making it suitable for motor control systems, switch-mode power supplies, industrial automation, and power management applications.
This MOSFET supports pulsed drain currents up to 72 amperes, allowing operation in circuits with transient high current demands. Its compact physical dimensions - length 6.73 mm, width 2.39 mm, and height 6.22 mm - facilitate integration into compact electronic devices.
Enhancement mode N-Channel MOSFET suitable for power switching. Maximum continuous drain current of 17A ensures high load capacity. 55V maximum drain-source voltage rating for various DC applications. Low Rds(on) value of 65 milliohms minimizes power losses.
Supports high temperature operation up to 175°C for industrial environments. Through-hole 3-pin IPAK package for sturdy PCB mounting. Typical gate charge of 15 nC aiding fast switching performance. Capable of pulsed current operation up to 72A for dynamic loads.
This MOSFET is widely used in industrial and commercial applications including motor control systems, switch-mode power supplies, industrial automation, and consumer electronics where reliable high current switching and efficient power management are critical.
Explore the full range of semiconductor components and MOSFETs at EnvMart for robust and efficient electronic design solutions.
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