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Infineon HEXFET N-Channel MOSFET 17A 55V Enhancement Mode 3-Pin IPAK IRLU024NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 6.22mm
Length 6.73mm
Model IRLU024NPBF
Width 2.39mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type IPAK
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 17A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 45W
Typical Gate Charge Qg @ Vgs 15nC
Maximum Gate Source Voltage Vgs -16, +16V
Forward Voltage Vf 1.3V
Infineon HEXFET N-Channel MOSFET, 17 A, 55 V, 3-Pin IPAK IRLU024NPBFBrand Infineon

Key Features

  • Enhancement mode transistor suitable for high-efficiency switching applications.
  • Maximum power dissipation rating of 45 watts for robust performance.
  • Through-hole mounting style ensures easy integration in PCB designs.
  • Operates reliably across a wide temperature range from -55°C to 175°C.
  • Low on-resistance of 65 milliohms minimizes power loss and heat generation.
  • Supports pulsed drain currents up to 72 amperes for dynamic switching.
  • Compact dimensions enable space-saving in electronic assemblies.
  • Features typical gate charge of 15 nanocoulombs for fast switching response.

Product Description

Infineon IRLU024NPBF is a HEXFET N-Channel MOSFET designed for demanding electrical and electronic applications requiring high current capability and voltage handling. With a maximum continuous drain current of 17 amperes and a maximum drain-source voltage rating of 55 volts, this enhancement mode MOSFET operates within a stable and wide temperature range from -55°C up to 175°C.

This device uses a 3-pin IPAK through-hole package, allowing easy mounting on printed circuit boards and providing mechanical robustness. Featuring a maximum power dissipation of 45 watts, it supports efficient power management in industrial and consumer electronics circuits.

The low drain-source on-resistance (Rds(on)) of 65 milliohms reduces conduction losses and heat generation, improving overall efficiency. Its typical gate charge of 15 nanocoulombs contributes to faster switching speeds, making it suitable for motor control systems, switch-mode power supplies, industrial automation, and power management applications.

This MOSFET supports pulsed drain currents up to 72 amperes, allowing operation in circuits with transient high current demands. Its compact physical dimensions - length 6.73 mm, width 2.39 mm, and height 6.22 mm - facilitate integration into compact electronic devices.

Enhancement mode N-Channel MOSFET suitable for power switching. Maximum continuous drain current of 17A ensures high load capacity. 55V maximum drain-source voltage rating for various DC applications. Low Rds(on) value of 65 milliohms minimizes power losses.

Supports high temperature operation up to 175°C for industrial environments. Through-hole 3-pin IPAK package for sturdy PCB mounting. Typical gate charge of 15 nC aiding fast switching performance. Capable of pulsed current operation up to 72A for dynamic loads.

This MOSFET is widely used in industrial and commercial applications including motor control systems, switch-mode power supplies, industrial automation, and consumer electronics where reliable high current switching and efficient power management are critical.

Explore the full range of semiconductor components and MOSFETs at EnvMart for robust and efficient electronic design solutions.

Infineon HEXFET N-Channel MOSFET 17A 55V Enhancement Mode 3-Pin IPAK IRLU024NPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 17 amperes.

It has a maximum drain-source voltage rating of 55 volts.

The typical gate charge is 15 nanocoulombs, which aids in fast switching performance.

The dimensions of this unit are 6.73 mm in length, 2.39 mm in width, and 6.22 mm in height.

The maximum power dissipation rating is 45 watts, allowing for robust performance.

This device operates reliably across a wide temperature range from -55°C to 175°C.

It uses a through-hole mounting style, which ensures easy integration in PCB designs.

The low drain-source on-resistance (Rds(on)) is 65 milliohms, which minimizes power loss and heat generation.

It supports pulsed drain currents up to 72 amperes for dynamic switching applications.

The package type is IPAK, which is a 3-pin configuration.

This model is suitable for applications such as motor control systems, switch-mode power supplies, and industrial automation.

The maximum gate-source voltage rating is -16V to +16V.

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