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Infineon DirectFET HEXFET N-Channel MOSFET 375A 60V Enhancement 15-Pin Surface Mount IRF7749L1TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.49mm
Length 9.15mm
Model IRF7749L1TRPBF
Width 7.1mm
Mount Type Surface
Series DirectFET, HEXFET
Maximum Operating Temperature 175°C
Package Type DirectFET
Minimum Operating Temperature -55°C
Pin Count 15
Channel Type N
Maximum Continuous Drain Current Id 375A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 1.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 200nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • High current rating up to 375 amperes for efficient power handling.
  • Operates at maximum drain-source voltage of 60 volts for robust performance.
  • Surface mount package with DirectFET technology for low conduction losses.
  • Features an enhancement mode channel with very low drain-source resistance of 1.5 milliohms.
  • Maximum power dissipation rating of 125 watts ensures thermal reliability.
  • Wide operating temperature range from -55°C to 175°C suitable for demanding environments.
  • Compact footprint with dimensions 9.15mm length, 7.1mm width, and 0.49mm height.
  • Typical gate charge of 200nC at Vgs enables fast switching applications.

Product Description

Infineon IRF7749L1TRPBF is a DirectFET HEXFET N-Channel MOSFET designed specifically for high-current, low-voltage power switching applications. Equipped with 15 pins and utilizing the DirectFET surface mount package, this MOSFET offers industry-leading low on-resistance and high efficiency within a compact footprint of 9.15 mm by 7.1 mm.

The device supports a maximum continuous drain current of 375 A and withstands up to 60 V between drain and source terminals, making it ideal for advanced switching and power management circuits. Its enhancement mode channel ensures reliable operation with a minimal drain-source resistance of 1.5 mΩ, helping reduce conduction losses significantly.

With a maximum power dissipation of 125 W and a wide operating temperature range from -55°C to 175°C, the IRF7749L1TRPBF is suited for demanding industrial environments where thermal management and ruggedness are critical. Its typical gate charge of 200 nC at rated gate-source voltage enables fast and efficient switching performance, essential for high-frequency applications.

The device's DirectFET packaging improves thermal performance with dual-sided cooling capabilities, contributing to higher power density and increased reliability. The MOSFET features a gate-source voltage rating of -20 to +20 V, providing robust protection against voltage spikes during operation.

Applications include industrial power supplies, motor control circuits, UPS systems, and other power electronic designs where high current capacity, low switching losses, compact size, and efficient thermal management are paramount. This MOSFET is not automotive-qualified but excels in commercial and industrial semiconductor roles.

High current rating up to 375A for heavy-duty power switching. Industry-low on-resistance with DirectFET packaging technology. Enhanced thermal management through low-profile and dual-sided cooling. Compact 15-pin surface-mount design for space-constrained PCBs.

Wide operating temperature range from -55°C to 175°C. Robust gate voltage range of -20 to +20 V for device protection. Suitable for industrial power conversion and motor drive applications. Supports efficient, fast switching with low gate charge.

Reliable electrical characteristics per Infineon quality standards. Explore EnvMart's comprehensive MOSFET selection for diverse industrial, laboratory, and commercial electronic needs.

Infineon DirectFET HEXFET N-Channel MOSFET 375A 60V Enhancement 15-Pin Surface Mount IRF7749L1TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 375A, making it suitable for high-current applications.

It can withstand a maximum drain-source voltage of 60V, ensuring robust performance in power switching applications.

The typical gate charge at the rated gate-source voltage is 200nC, which facilitates fast switching applications.

This model has a compact footprint with dimensions of 9.15mm in length, 7.1mm in width, and 0.49mm in height.

The maximum power dissipation rating is 125W, ensuring thermal reliability during operation.

It operates within a wide temperature range from -55°C to 175°C, suitable for demanding environments.

This model utilizes a DirectFET surface mount package, which enhances thermal performance and reduces conduction losses.

The gate-source voltage rating for this MOSFET is -20 to +20V, providing robust protection against voltage spikes.

It features a very low drain-source resistance of 1.5mΩ, which helps minimize conduction losses.

This MOSFET is suitable for industrial power supplies, motor control circuits, and UPS systems, among other power electronic designs.

The IRF7749L1TRPBF has a total of 15 pins, designed for surface mount configurations.

It features an N-channel configuration, designed for enhancement mode operation.

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