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Infineon OptiMOS N-Channel MOSFET, 100 A Continuous Drain Current, 30 V Drain-Source Voltage, 8-Pin TDSON BSC011N03LSIATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 6.1mm
Model BSC011N03LSIATMA1
Width 5.35mm
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 150°C
Package Type TDSON
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 1.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 96W
Typical Gate Charge Qg @ Vgs 34nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.7V

Key Features

  • Features a very low on-resistance of 1.4 milliohms to minimize conduction losses.
  • Supports high continuous drain current of 100 amperes for heavy load applications.
  • Maximum drain-source voltage rated at 30 volts suitable for low-voltage power stages.
  • Supplied in an 8-pin TDSON surface-mount package for efficient PCB assembly.
  • Typical gate charge is 34 nanoCoulombs at standard gate voltage for moderately fast switching.
  • Power dissipation capacity of 96 watts enables operation under elevated thermal stress.
  • Operating temperature range from -55°C to 150°C allows use in harsh environments.
  • Low forward voltage drop of approximately 0.7 volts enhances operational efficiency.

Product Description

Infineon BSC011N03LSIATMA1 is an OptiMOS Series N-Channel MOSFET designed for efficient power switching in surface-mounted electronic assemblies. It features a high continuous drain current rating of 100 amperes and a maximum drain-source voltage of 30 volts enhancement mode channel, making it ideal for low-voltage, high-current applications.

The device is packaged in an 8-pin TDSON surface mount package, permitting compact PCB integration while ensuring rapid gate control and low conduction losses with a very low on-resistance of 1.4 milliohms. The moderate gate charge of 34 nanoCoulombs enables relatively fast switching speeds suitable for synchronous buck converters, motor drive stages, battery management circuits, and DC-DC converters.

Thermal dissipation of up to 96 watts supports elevated thermal loads, and the device operates reliably over a wide junction temperature range from -55°C to 150°C. Its gate-source voltage limits of -20 V to +20 V help secure safe operation without damaging the gate oxide layer.

This MOSFET is well suited for industrial, consumer electronics, telecommunications, and automotive power stages where efficient conduction and switching are necessary. Its low forward voltage drop of approximately 0.7 volts further improves electrical efficiency during conduction.

Very low on-resistance 1.4 milliohms reduces power losses. High continuous drain current of 100 A supports heavy load switching. 30 V maximum drain-source voltage suitable for low-voltage circuits. 8-pin TDSON package for surface mounting on PCBs.

Moderate gate charge of 34 nC for fast switching. Power dissipation rating of 96 W for thermal stability. Wide operating temperature range supports harsh environments. Forward voltage of 0.7 V enhances efficiency. Maximum gate-source voltage ±20 V ensures dielectric safety.

Choose the Infineon BSC011N03LSIATMA1 for reliable, efficient power management in advanced electronic and industrial systems. Explore more options in semiconductor MOSFETs and leverage EnvMart expertise for your component sourcing needs.

Infineon OptiMOS N-Channel MOSFET, 100 A Continuous Drain Current, 30 V Drain-Source Voltage, 8-Pin TDSON BSC011N03LSIATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 amperes, making it suitable for heavy load applications.

This MOSFET has a maximum drain-source voltage rating of 30 volts, which is appropriate for low-voltage power stages.

The typical gate charge for the BSC011N03LSIATMA1 is 34 nanoCoulombs at standard gate voltage, enabling moderately fast switching.

The dimensions of the TDSON package are 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.

It has a power dissipation capacity of 96 watts, allowing it to operate under elevated thermal stress.

The operating temperature range for this model is from -55°C to 150°C, making it suitable for harsh environments.

The forward voltage drop is approximately 0.7 volts, which enhances operational efficiency during conduction.

The maximum gate-source voltage is rated at -20 V to +20 V, ensuring safe operation without damaging the gate oxide layer.

This model features an 8-pin configuration, suitable for surface mounting on PCBs.

It uses an enhancement mode N-channel, which is ideal for efficient power switching applications.

This MOSFET is suitable for applications such as synchronous buck converters, motor drive stages, battery management circuits, and DC-DC converters.

This model belongs to the OptiMOS series, known for its efficient power management capabilities.

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