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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC011N03LSIATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
Infineon BSC011N03LSIATMA1 is an OptiMOS Series N-Channel MOSFET designed for efficient power switching in surface-mounted electronic assemblies. It features a high continuous drain current rating of 100 amperes and a maximum drain-source voltage of 30 volts enhancement mode channel, making it ideal for low-voltage, high-current applications.
The device is packaged in an 8-pin TDSON surface mount package, permitting compact PCB integration while ensuring rapid gate control and low conduction losses with a very low on-resistance of 1.4 milliohms. The moderate gate charge of 34 nanoCoulombs enables relatively fast switching speeds suitable for synchronous buck converters, motor drive stages, battery management circuits, and DC-DC converters.
Thermal dissipation of up to 96 watts supports elevated thermal loads, and the device operates reliably over a wide junction temperature range from -55°C to 150°C. Its gate-source voltage limits of -20 V to +20 V help secure safe operation without damaging the gate oxide layer.
This MOSFET is well suited for industrial, consumer electronics, telecommunications, and automotive power stages where efficient conduction and switching are necessary. Its low forward voltage drop of approximately 0.7 volts further improves electrical efficiency during conduction.
Very low on-resistance 1.4 milliohms reduces power losses. High continuous drain current of 100 A supports heavy load switching. 30 V maximum drain-source voltage suitable for low-voltage circuits. 8-pin TDSON package for surface mounting on PCBs.
Moderate gate charge of 34 nC for fast switching. Power dissipation rating of 96 W for thermal stability. Wide operating temperature range supports harsh environments. Forward voltage of 0.7 V enhances efficiency. Maximum gate-source voltage ±20 V ensures dielectric safety.
Choose the Infineon BSC011N03LSIATMA1 for reliable, efficient power management in advanced electronic and industrial systems. Explore more options in semiconductor MOSFETs and leverage EnvMart expertise for your component sourcing needs.
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