onsemi Isolated 2 N-Channel Power MOSFET, 3.5 A, 60 V Enhancement Mode, 8-Pin SOIC NDS9945

onsemi NDS9945 Isolated 2 N-Channel Power MOSFET is a dual transistor designed for efficient power switching applications. It supports a maximum continuous drain current of 3.5 A and a drain-source voltage of 60 V, making it suitable for a wide range of electronic and power management circuits.

This MOSFET employs enhancement mode field effect transistor technology, leveraging Fairchild's proprietary high cell density DMOS process to optimize low on-state resistance, ruggedness, and fast switching capabilities.

The device features an 8-pin SOIC surface mount package, enabling compact PCB layouts in industrial, automotive, and electronic systems. Its specified operating temperature ranges from -55°C to +150°C ensure reliable performance in harsh environments.

The NDS9945 boasts a low typical drain-source resistance of 300 milliohms, which helps reduce conduction losses and improve efficiency. The maximum gate-source voltage rating of ±20 V provides sufficient margin for gate drive signals.

With a typical gate charge of 12.9 nanocoulombs, this MOSFET offers fast and responsive switching, suited for power converters, motor drives, and general purpose switching circuits.

This MOSFET features a maximum continuous drain current of 3.5 A for reliable power delivery. It supports a maximum drain-source voltage of 60 V for diverse circuit applications. Utilizes enhancement mode technology for efficient switching performance.

Packaged in an 8-pin SOIC surface mount format suitable for compact electronic designs. Features a low maximum drain-source resistance of 300 milliohms to minimize conduction loss. Designed for operating temperatures from -55°C to +150°C ensuring robust industrial use.

Has a typical gate charge of 12.9 nanocoulombs enabling fast switching response. Supports a maximum gate-source voltage range of -20 V to +20 V for gate drive flexibility. Maximum power dissipation is rated at 2 watts, supporting moderate thermal loads.

Compact device dimensions of 4.9 mm length, 3.9 mm width, and 1.57 mm height.

This power MOSFET is ideal for use in industrial electronics, power management systems, automotive circuits, and consumer electronics requiring efficient switch operation and thermal resilience.

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